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Method of manufacturing CMOS image sensor

A technology of pixel area and oxide thin film, which is applied in semiconductor/solid-state device manufacturing, electric solid-state devices, semiconductor devices, etc., and can solve problems such as degradation of light transmission efficiency and increase in distance

Inactive Publication Date: 2008-07-02
DONGBU HITEK CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

If the upper passivation layer 3 is etched too shallowly, due to the thickness of the upper passivation layer 3, the distance between the microlens 5 and the photodiode increases, thereby degrading the light transmission efficiency

Method used

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  • Method of manufacturing CMOS image sensor
  • Method of manufacturing CMOS image sensor
  • Method of manufacturing CMOS image sensor

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Experimental program
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Embodiment Construction

[0018] 2A to 2C illustrate cross-sectional views of a method of manufacturing a CMOS image sensor according to an embodiment of the present invention. As shown in FIG. 2A, a CMOS image sensor according to an embodiment of the present invention includes an epitaxial layer 10 formed over a lower surface thereof. In other words, epitaxial layer 10 is formed over the semiconductor substrate. Epitaxial layer 10 includes a pixel region in which a photoelectric conversion portion such as a photodiode is formed. The epitaxial layer also includes a peripheral area having a plurality of circuits and pads for detecting signals output from the pixel area. In other words, the layer formed over the semiconductor substrate is defined by the pixel region and the peripheral region. Hereinafter, it is assumed that a plurality of layers according to an embodiment of the present invention are formed over a semiconductor substrate including a pixel region and a peripheral region.

[0019] A pas...

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Abstract

A method of a CMOS image sensor is disclosed. A method of manufacturing a CMOS image sensor includes forming an epi layer formed over a semiconductor substrate including a pixel region and a peripheral region. At least one oxide film may be formed over the epi layer, including the peripheral region and an upper pad formed therein. A nitride film may be formed over the oxide film. A primary array etching process may be performed with respect to the nitride film using a first photoresist pattern for opening a main pixel region in the pixel region. A secondary array etching process may be performed with respect to the nitride film and the oxide film using a second photoresist pattern for opening the upper pad. The oxide film of the pixel region may be obliquely removed to a predetermined depth. A plurality of color filters and a plurality of micro lenses may be formed over the pixel region after the secondary array etching process.

Description

[0001] This application claims the benefit of Korean Patent Application No. 10-2006-0137288 filed on December 29, 2006, the entire contents of which are hereby incorporated by reference. technical field [0002] The present invention relates to a CMOS image sensor, and more particularly, to a manufacturing method of the CMOS image sensor. Background technique [0003] Image sensors convert optical images into electrical signals. Image sensors may be classified as Complementary Metal Oxide Semiconductor (CMOS) image sensors or Charge Coupled Device (CCD) image sensors. CCD image sensors have relatively high photosensitivity and low noise compared with CMOS image sensors. However, CCD image sensors are more difficult to miniaturize and integrate with other devices. The power consumption of the CCD image sensor is also high. On the other hand, CMOS image sensors are manufactured using a more simplified process than CCD image sensors. CMOS image sensors are easier to miniatu...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/822H01L27/146
CPCH01L27/14636H01L27/14685H01L27/14687H01L27/146
Inventor 林基识玄佑硕
Owner DONGBU HITEK CO LTD