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Varactor and method for manufacturing thereof

A technology of a varactor diode and a manufacturing method, which is applied in the manufacture of semiconductor/solid-state devices, electrical components, circuits, etc., can solve problems such as the increase in the size of the N+ region

Inactive Publication Date: 2010-10-13
DONGBU HITEK CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, if bulk capacitance (Cjo) is required in the associated N+ / P well junction varactor, the size of the corresponding N+ region must increase

Method used

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  • Varactor and method for manufacturing thereof
  • Varactor and method for manufacturing thereof
  • Varactor and method for manufacturing thereof

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Experimental program
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Embodiment Construction

[0013] Hereinafter, a varactor diode and a method of manufacturing the same according to an embodiment of the present invention will be described with reference to the accompanying drawings. In the description of the exemplary embodiments, it will be understood that when a layer (or film) is referred to as being "on" another layer or substrate, it can be directly on another layer or substrate, or Intermediate layers may also be present. Further, it will be understood that when a layer is referred to as being "under" another layer, it can be directly under, and one or more intervening layers may also be present. In addition, it will also be understood that when a layer is referred to as being "between" two layers, it can be the only layer between the two layers, or one or more intervening layers may also be present.

[0014] figure 1 is a cross-sectional view showing a varactor diode according to an embodiment.

[0015] A varactor according to an exemplary embodiment includ...

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PUM

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Abstract

The present invention provides a variable capacitance diode and manufacturing method thereof, that is disclosing a variable capacitance diode and / or variable capacity including: a plurality of first conductive trap forming on the substrate vertically; a plurality of second conductive ion implantation areas forming in the first conductive traps; at least one second conductive plug connecting to the second conductive ion implantation areas electrically; insulation areas forming on two sides of the second conductive ion implantation area on the proximal end; and first conductive ion implantationareas, locating in the most upper first conductive trap and separating from the second conductive ion implantation areas on the proximal end by separating areas.

Description

technical field [0001] The present invention relates to a varactor diode and a method of manufacturing the same. Background technique [0002] Diodes include vacuum tube diodes and semiconductor diodes. Semiconductor diodes include point contact diodes, junction diodes, tunnel diodes, photodiodes, and varactor diodes. [0003] A varactor diode is a variable reactor diode and its capacitance changes according to the applied voltage. (Hereinafter, the term "varicap diode" will be used to denote a varactor diode or a variable capacitance). [0004] According to the related art, N+ / P well junction varactor diodes have been fabricated using a CMOS process. However, if bulk capacitance (Cjo) is required in the associated N+ / P well junction varactor, the size of the corresponding N+ region must increase. Therefore, the size of the element must also become larger. Contents of the invention [0005] Embodiments of the present invention provide a varactor diode and a manufactur...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/93H01L21/329H10B12/00
CPCH01L29/93H01L21/76H01L21/265H01L21/28
Inventor 林秀
Owner DONGBU HITEK CO LTD