Unlock instant, AI-driven research and patent intelligence for your innovation.

EL device and its making method

A technology of an electroluminescence device and a manufacturing method, which are applied to circuits, electrical components, semiconductor devices, etc., can solve the problem that the heat dissipation path of the light emitting diode element 10 cannot be provided, the heat energy accumulation of the light emitting diode device 1 is difficult to dissipate, and the light emission of the light emitting diode device 1 is affected. Efficiency and other issues, to achieve the effect of improving external light extraction and luminous efficiency, avoiding current embolism, and uniform current distribution

Inactive Publication Date: 2010-05-19
DELTA ELECTRONICS INC
View PDF7 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] In the prior art, the epitaxial substrate is generally used as the transparent substrate 11, and the transparent adhesive layer 12 is composed of an organic adhesive material. Since the thermal conductivity of the epitaxial substrate and the organic adhesive material is low, it cannot provide a better heat dissipation path for the LED element 10, resulting in The light-emitting diode device 1 has problems such as the accumulation of heat energy and is difficult to dissipate, which affects the luminous efficiency of the light-emitting diode device 1
[0005] Due to the low luminous efficiency still exists in the development of light-emitting diodes at the present stage, the industry is more focused on how to effectively extract the photons generated in the light-emitting diode element 10, and at the same time reduce the photons generated by the continuous reflection in the light-emitting diode element 10. Necessary thermal energy; on the other hand, it is also committed to solving the problem of dissipating heat energy inside the LED element 10, so as to reduce the overall operating temperature of the LED device 1, and to achieve the ultimate goal of improving the luminous efficiency of the LED device 1

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • EL device and its making method
  • EL device and its making method
  • EL device and its making method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0036] An electroluminescent device and its manufacturing method according to preferred embodiments of the present invention will be described below with reference to related drawings, wherein the same elements will be described with the same reference symbols.

[0037] Please refer to Figure 2A to Figure 5C As shown, an electroluminescent device 2 according to a preferred embodiment of the present invention includes a substrate 21, a reflective layer 22, a patterned transparent conductive layer 23, at least one light emitting diode element 24, a first contact electrode 25 and a second contact electrode 26 .

[0038] In this embodiment, the substrate 21 can be a substrate with high thermal conductivity, and its material is selected from silicon (Si), gallium arsenide (GaAs), gallium phosphide (GaP), silicon carbide (SiC), boron nitride (BN) , aluminum nitride (AlN), aluminum (Al), copper (Cu) and combinations thereof.

[0039] The reflective layer 22 is disposed on the subs...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses an electroluminescence device, which comprises a base plate, a reflecting layer, a nano-pattern transparent conductive layer, at least a luminescent diode element, a first contact electrode and a second contact electrode. Among which, the reflecting layer is arranged on the base plate; the nano-pattern transparent conductive layer is arranged on the reflecting layer; the luminescent diode element is arranged on the nano-pattern transparent conductive layer; the luminescent diode comprises a first semiconductor layer, a luminescent layer and a second semiconductor layerone by one; the second semiconductor layer is arranged on the nano-pattern transparent conductive layer and the reflecting layer; the first contact electrode is electrically connected with the first semiconductor layer; the second contact electrode is electrically connected with the second semiconductor layer.

Description

technical field [0001] The invention relates to an electroluminescent device and its manufacturing method, in particular to an electroluminescent device with high efficiency and its manufacturing method. Background technique [0002] A light emitting diode (Light Emitting Diode, LED) is a kind of luminescent light-emitting element, which utilizes the energy released by the combination of electrons and holes in a semiconductor material, and releases it in the form of light. Depending on the material used, it can emit monochromatic light of different wavelengths, and can be mainly divided into two types: visible light-emitting diodes and invisible light (infrared) light-emitting diodes. Compared with traditional light bulbs, light-emitting diodes are energy-saving. , shock resistance and fast flashing speed, etc., so it has become an indispensable important component in daily life. [0003] Please refer to figure 1 As shown, a conventional light emitting diode device 1 inclu...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/00H01L33/38
Inventor 陈世鹏薛清全廖学国程传嘉陈煌坤
Owner DELTA ELECTRONICS INC