Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Method for reconstructing ground clamp curve and electric power clamp curve of chip IBIS model

A curve and clamping technology, applied in the field of IBIS model simulation, can solve the problems of inaccuracy of IBIS model, weaken the role of simulation on design guidance, and achieve the effect of improving reliability and authenticity

Inactive Publication Date: 2011-06-22
昆山杰得微电子有限公司
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Due to the differences in the circuit structure and working conditions of each customer, as well as the inaccuracy of the IBIS model provided by the IC design manufacturer, many simulation results are far from the actual work results, which greatly weakens the guiding role of simulation for design.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for reconstructing ground clamp curve and electric power clamp curve of chip IBIS model
  • Method for reconstructing ground clamp curve and electric power clamp curve of chip IBIS model
  • Method for reconstructing ground clamp curve and electric power clamp curve of chip IBIS model

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0022] The present invention will be described in further detail below in conjunction with the accompanying drawings.

[0023] The main idea of ​​the present invention is to release some basic parameters according to the IBIS model provided by the IC manufacturer, select appropriate discrete components and parts to construct the Buffer model accordingly, and carry out spice simulation to obtain the current-voltage curve (IV) of the more accurate IBIS model Curve) method to improve the credibility and authenticity of the simulation results.

[0024] In the IBIS model, there are mainly three models for describing pin behavior: output BUFFER, input BUFFER, and IOBUFFER, which can be subdivided into I / O_open_sink, I / O_open_drain, etc. according to different structures. And the most basic data of these buffers are two: IV curve, V-t curve. Simulation is based on these BUFFER data curves to describe the time domain response of the signal and the voltage transmission waveform.

[0...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a method of reconstructing the ground clamping curve and the power clamping curve of a chip IBIS model, which reconstructs the current-voltage curve of the IBIS through a simple circuit model and is applicable to the signal integrity analysis and circuit simulation technical field. According to the characteristics showed by the power clamping curve and the ground clamping curve, proper discrete components mainly involving diodes and resistors are selected to build different equivalent circuits, and then the simulation of the equivalent circuits is carried out to obtainthe accurate ground clamping curve and the power clamping curve of the IBIS model. The method which is simple and easy enables an engineer to carry out accurate simulation before obtaining the accurate IBIS model.

Description

technical field [0001] The invention relates to a simulation method of a printed circuit board, in particular to an IBIS model simulation method of an IC chip. Background technique [0002] In the IC chip application and simulation technology, the IBIS model is a method for quickly and accurately modeling the IO buffer based on the current-voltage curve (IV curve), and it is an international standard that reflects the electrical characteristics of the chip drive and receive. A standard file format to record parameters such as drive source output impedance, rise and fall time, and input load, which is very suitable for calculation and simulation of high-frequency effects such as ringing and crosstalk. IBIS is a simple and intuitive file format that provides a behavioral description of drivers and receivers without revealing the intellectual property details of the circuit's internal construction. Since IBIS is a simple model, it saves 10 to 15 times the amount of calculation...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): G06F17/50
Inventor 欧阳合黄娟王阳王新成杨海潘杰王立伟徐晖
Owner 昆山杰得微电子有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com