Semiconductor device and method of manufacturing such a device
A technology of semiconductors and silicon semiconductors, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve problems such as integration limitations and achieve the effect of optimizing possibilities
Active Publication Date: 2011-10-05
NXP BV
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Problems solved by technology
On the one hand, the possible integration levels of the known transistor are thus limited, but, in addition, the characteristics of this transistor, such as high-frequency performance, can still be improved
Method used
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[0023] Figure 1-9 is a schematic cross-sectional view perpendicular to the thickness direction of the device according to the invention, showing successive production stages by the method according to the invention. The at least substantially finished device 10 of this example (see Figure 9 ) comprises a semiconductor body 11 which in this case has an n-type silicon substrate 12 , a semiconductor layer structure provided thereon and a bipolar transistor. (In this example) the discrete transistor has an n-type emitter region 1, a p-type base region 2 and an n-type collector region 3, which are respectively provided with first, second and third connection conductors 100, 200, 300. The base region 2 consists of a mixed crystal of silicon and germanium, in this example with a germanium content of 20% and a doping concentration of 1×10 19 at / cm 3 to 1×10 20 at / cm 3 In the range. The layered regions 21, 22 are arranged on either side of the base region, viewed from the thick...
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The invention relates to a semiconductor device (10) with a substrate (12) and a semiconductor body (11) of silicon comprising a bipolar transistor with an emitter region, a base region and a collector region (1,2,3) of a first conductivity type, a second conductivity type opposite to said first conductivity type and the first conductivity type, respectively, with a first semiconductor region (3)comprising the collector region or the emitter region being formed in the semiconductor body (11), on top of which a second semiconductor region (2) comprising the base region is present, on top of which a third semiconductor region (1) comprising the other of said collector region and said emitter region is present, said semiconductor body (11) being provided with a constriction at the location of the transition between the first and the second semiconductor region (3, 2) , which constriction has been formed by means of an electrically insulating region (26, 27) buried in the semiconductor body (11). According to the invention a part of the semiconductor body that is formed above the buried electrically insulating region (26,27) is monocrystalline. This enables a strong lateral miniaturization of the device and results in excellent high frequency properties of the transistor. Such a device (10) is possible thanks to its manufacture with a method of manufacturing according to the invention.
Description
technical field [0001] The invention relates to a semiconductor device with a substrate and a silicon semiconductor body, the semiconductor device comprising a bipolar transistor having an emitter region each of a first conductivity type, a second conductivity type opposite to the first a base region of conductivity type and a collector region of said first conductivity type, a first semiconductor region comprising a collector region or an emitter region is formed in a semiconductor body, on top of which occurs a region comprising a base region of a layered second semiconductor region, on top of which appears a third semiconductor region comprising the other of said collector region and emitter region, said semiconductor body between the first and second semiconductor regions The transitions between the regions are provided with compressive layers formed by electrically insulating regions buried in the semiconductor body. The invention also relates to methods of fabricating s...
Claims
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IPC IPC(8): H01L21/331H01L29/10H01L29/732H01L29/737
CPCH01L29/1004H01L29/0649H01L21/26506H01L29/66242H01L29/732H01L29/7378H01L29/66272H01L21/26513
Inventor 约翰内斯·J·T·M·东科尔斯韦伯·D·范诺尔特弗朗索瓦·纳耶
Owner NXP BV