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Pattern copy mask, focal distance fluctuation measuring method and apparatus, manufacture method for semiconductor device

A measuring method and a technology for replicating bodies, which are applied in the manufacture of semiconductor/solid-state devices, exposure devices for photoengraving processes, and photoengraving processes for patterned surfaces, and can solve problems such as small dimensional uniformity

Inactive Publication Date: 2008-09-03
FUJITSU MICROELECTRONICS LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

In addition, the finer the pattern becomes, the smaller the uniformity of the required size becomes

Method used

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  • Pattern copy mask, focal distance fluctuation measuring method and apparatus, manufacture method for semiconductor device
  • Pattern copy mask, focal distance fluctuation measuring method and apparatus, manufacture method for semiconductor device
  • Pattern copy mask, focal distance fluctuation measuring method and apparatus, manufacture method for semiconductor device

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Embodiment Construction

[0045] Essentials of the invention

[0046] In general, the relationship between the focus offset (offset) value and the dimensional measurement value of the reproduced pattern can be drawn as a so-called CD-focus curve that can be approximated by an even-order function. exist Figure 1A An example of a CD-focal length curve is shown in . In this case, the extreme value of the focus offset value becomes the optimum focus value, that is, becomes the focus center. Here, since the distance between a pair of replicated patterns is used as the dimension measurement value of the replicated pattern, the focus shift value becomes a minimum value. In this way, the CD-focus curve is approximated by a quadratic function, so if a focus error occurs, it is difficult to determine whether the direction of deviation from the extremum is positive or negative. In addition, since the variation of the dimensional measurement value with respect to the focal length variation is extremely small in...

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Abstract

The invention relates to a method for controlling a protection visor (29) of a welding device (1), wherein a signal from the welding device (1) is transmitted, via an emitting / capturing device (30), to the welding helm (28), whereon an electrically controllable protection visor (29) is controlled by an emitting / capturing device (31) which is integrated into the welding helm (28) and the protection visor (29) becomes dark. Said protection visor (29) is controlled by a control device (4) of the welding device (1) via the emitting / capturing devices (30, 31) during the welding process and also after igniting the arc (15). The intensity and / or the degree of darkening of the protection visor (29) changes during the welding process, wherein the protection visor (29) is darkened and lightened in an alternating manner. As a result, the welder can follow the welding process in an improved manner.

Description

technical field [0001] The present invention relates to a pattern duplication mask and a measurement focus variation used when a duplication pattern is formed on an object to be duplicated such as a wafer using an exposure device in a photolithography process for manufacturing a semiconductor device or a display device such as a liquid crystal. A method and apparatus for measuring focus variation (focus error), and a method for manufacturing a semiconductor device using the method. Background technique [0002] Recently, with the high integration of semiconductor elements, patterns formed by photolithography have become finer and finer. In addition, the finer the pattern, the smaller the required dimensional uniformity. One of the reasons for greatly deteriorating the dimensional uniformity is an exposure error of an exposure device. Among exposure errors, especially focus error and exposure amount error become very severe problems in the manufacture of devices of the so-c...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F1/08H01L21/027G03F7/20G03F1/44
CPCG03F7/70641G03F1/14G03F7/70433G03F1/44G03F1/84G03F1/36G03F7/70625
Inventor 山本智彦
Owner FUJITSU MICROELECTRONICS LTD
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