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Temperature-measuring device, and method for measuring temperature

A technique for temperature determination, areal density, used in measuring devices, thermometers, thermometers with physical/chemical changes, etc.

Inactive Publication Date: 2012-07-18
KOBE STEEL LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0014] In the above-mentioned existing temperature measurement tool and the temperature measurement device and temperature measurement method using the temperature measurement tool, there is no need for external A tool capable of measuring the maximum attainable temperature in a wide temperature range from low temperature to high temperature without the generation of impurities and dust even in wiring.

Method used

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  • Temperature-measuring device, and method for measuring temperature
  • Temperature-measuring device, and method for measuring temperature
  • Temperature-measuring device, and method for measuring temperature

Examples

Experimental program
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Effect test

Embodiment 1

[0142] Through the sputtering method, the vacuum degree is 1.2×10 -6 Torr, the distance between substrate targets is 100mm, the argon gas pressure in the film formation is 2mTorr, and the film formation power is 2W / cm 2 Under the conditions of 0.35 mm thick and 2 inches thick, an aluminum thin film with a film thickness of 300 nm and a purity of 99.99 is formed to form a substrate with a metal thin film. Using this metal thin film-attached substrate, it was heated in an argon atmosphere at a temperature increase of 5° C. / min. The surface shape of the protrusions formed on the surface of the metal thin film of the heated metal thin film substrate was observed with a microscope, and the surface shape was processed by a CCD camera constituting the surface information collecting unit to obtain an analog image signal. This image signal is digitized by an IO board serving as an AD converter to obtain image data. Next, the image data is binarized using the number calculation unit, ...

Embodiment 2

[0148] Hereinafter, the temperature measuring device and the temperature measuring method of the highest attained temperature briefly described in Example 1 will be described. figure 2 It is a block diagram for explaining the temperature measuring device in this embodiment.

[0149] exist figure 2 Among them, 1 is the temperature measuring member that is set in the vacuum heat treatment furnace and given the heat history as the temperature measuring member that should be measured as the target shown in Example 1. An optical microscope for observing the shape of protrusions on the surface of the metal film, 4 is installed on the optical microscope 3, a CCD camera for outputting analog image signals, and 5 is an IO that digitizes the output signal of the CCD camera 4 and is used for outputting image data Board, 6 is the arithmetic processing device connected with the IO board, and 7 is to carry out the binarization process on the digitized image data input from the IO board 5...

Embodiment 3

[0152] Through the sputtering method, the vacuum degree is 1.2×10 -6 Torr, the distance between substrate targets is 100mm, the argon gas pressure in the film formation is 3mTorr, and the film formation power is 2.8W / cm 2 Under the conditions of 0.625 mm thick and 6 inches of silicon wafers, an aluminum thin film with a film thickness of 300 nm and a purity of 99.99 is formed to form a substrate with a metal thin film.

[0153] Next, heat treatment is performed on the above-mentioned substrate with the metal thin film in a vacuum heat treatment furnace. At this time, the temperature increase rate was 5° C. / minute, and after raising to a predetermined temperature, the temperature was maintained for 10 minutes, and then naturally cooled. At this time, a temperature measuring wafer with a thermocouple manufactured by Sensory Co., Ltd. was used to measure the temperature of the central portion of the substrate with the metal thin film, and record the highest attained temperature....

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Abstract

The invention provides a temperature-measuring member, a temperature-measuring device, and a method for measuring temperature, wherein maximum temperature can be reached in a wide temperature range from low temperature to high temperature without external wirings, and impurities dust are not provided. The surface density of projections formed on a thin metal film of a temperature-measuring member having the metal film having been subjected to a temperature profile is calculated with a number-calculating section 7 according to image data fed into an arithmetic processing unit through a CCD camera 4, and an I / O board 5. The maximum temperature of the object is determined with the temperature-calculating unit according to the surface density and data on the maximum temperature and surface density previously stored in a memory 8. Furthermore, a temperature-measuring member 9 constituted by a thin aluminum film arranged on a substrate is used. A reduction in the reflectivity of the film due to projections formed on the film surface according to a temperature profile to which the member has been subjected is measured. The maximum temperature in the temperature profile is estimated according to the reduction in reflectivity.

Description

technical field [0001] The present invention relates to a technique for measuring the temperature of a temperature-measured object such as a substrate in the fields of semiconductor and liquid crystal manufacturing, and the like. Specifically, the present invention relates to a temperature measuring member, a temperature measuring device, and a temperature measuring method for measuring the maximum attained temperature during a temperature process to which an object to be measured is subjected. Background technique [0002] Typical examples of measuring tools for measuring the temperature of the object to be measured include tools that use changes in thermal expansion coefficients of gases and liquids, tools that measure temperature changes in electrical resistance of metals (platinum resistance temperature sensors), Tools for measuring temperature changes in semiconductor characteristics (thermistor), tools for measuring thermoelectromotive force generated at contact point...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01K11/00
Inventor 水野雅夫平野贵之富久胜文
Owner KOBE STEEL LTD
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