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CCD solid-state imaging device, photographic apparatus and image data correction method

A technology for solid-state imaging devices and photographic equipment, which can be used in image communication, radiation control devices, electrical solid-state devices, etc., and can solve problems such as increasing manufacturing costs and reducing image quality of image signals.

Inactive Publication Date: 2008-10-01
FUJIFILM CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] However, the vertical charge transfer path is provided for each pixel column of a plurality of pixels formed in a two-dimensional array on the surface of the semiconductor substrate, so that when the signal amplification factor is changed for each vertical charge transfer path, the signal amplification factor Differences between can cause fixed patterns and degrade the image quality of the image signal
It is extremely difficult to manufacture a solid-state imaging device that does not cause this difference, and the manufacturing cost of such a solid-state imaging device increases

Method used

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  • CCD solid-state imaging device, photographic apparatus and image data correction method
  • CCD solid-state imaging device, photographic apparatus and image data correction method
  • CCD solid-state imaging device, photographic apparatus and image data correction method

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Embodiment Construction

[0036] Although the present invention will be introduced below with reference to the exemplary embodiments of the present invention, the following exemplary embodiments and their modification schemes do not limit the present invention.

[0037] According to the exemplary embodiment of the present invention, the correlation between the electron multiplication coefficient and the position can be corrected, so that the fixed pattern noise of the imaged image data can be suppressed and a high-quality image can be imaged.

[0038] Hereinafter, exemplary embodiments of the present invention will be described with reference to the accompanying drawings.

[0039] FIG. 1 is a schematic diagram of the surface of a CCD solid-state imaging device to which an exemplary embodiment of the present invention is applied. FIG. 1A is a solid-state imaging device of a so-called honeycomb pixel arrangement in which rows of pixels (photodiodes: PD) in odd rows are shifted by 1 / 2 pitch with respect to pi...

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Abstract

This invention provides a CCD solid-state imaging device including: a semiconductor substrate; a plurality of photodiodes arranged in a two-dimensional array; a plurality of vertical charge transfer paths, each reading a signal charge from the photo diodes, wherein electron multiplication of the signal charge is performed in each of the vertical transfer paths; and a storage section that stores data indicating a multiplication factor of the electron multiplication, the multiplication factor being detected at each place of the vertical transfer paths in which the electron multiplication is performed.

Description

[0001] This application is based on the Japanese patent application 2007-95225 filed on March 30, 2007 and claims the priority of the Japanese patent application, and the entire disclosure of the Japanese patent application is incorporated herein by reference. Technical field [0002] The present invention relates to a CCD solid-state imaging device, and in particular to a CCD solid-state imaging device that amplifies signal charges by causing impact ionization on a vertical charge transfer path, a photographing device, and an image data correction method. Background technique [0003] In recent CCD solid-state imaging devices, the device becomes more and more refined and the amount of saturated charge per pixel becomes smaller and smaller, and when taking high-sensitivity photos of dark scenes, the amount of signal charge accumulated in each pixel will change. It's very small. As a result of this, signal amplification is required, but the floating diffusion amplifier (FDA) provid...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/148H04N3/15H04N5/335H04N25/00H04N25/73
CPCH04N3/1537H01L27/14812H04N3/155H04N25/63H04N25/73H04N25/67
Inventor 古田善工大岛宗之
Owner FUJIFILM CORP