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Technique for forming a copper-based metallization layer including a conductive capping layer

A capping layer and metal technology, which is applied in the manufacture of circuits, electrical components, semiconductors/solid-state devices, etc., can solve problems such as the performance and reliability of interconnects

Inactive Publication Date: 2008-10-01
ADVANCED MICRO DEVICES INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Although the exact mechanism of electromigration in copper wires is still not fully understood, it has been demonstrated that voids in and on the sidewalls, and especially at the interface to adjacent materials, have a significant impact on the final performance and performance of the interconnect. Reliability can have a considerable impact

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  • Technique for forming a copper-based metallization layer including a conductive capping layer
  • Technique for forming a copper-based metallization layer including a conductive capping layer
  • Technique for forming a copper-based metallization layer including a conductive capping layer

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Embodiment Construction

[0016] The invention is susceptible to various modifications and variations, specific embodiments of which have been shown by way of example in the drawings and described in detail herein. It should be understood, however, that the description herein of specific embodiments is not intended to limit the invention to the particular forms disclosed, but is intended to cover all within the spirit and scope of the invention as defined by the appended claims. modifications, equivalents and variations.

[0017] Exemplary embodiments of the present invention are described below. In the interest of clarity, not all features of an actual implementation are described in this specification. Of course, it should be understood that in the development of any such practical implementation, many implementation-specific decisions must be made to achieve the developer's specific objectives, such as compliance with system-related and business-related constraints, which can be derived from an imp...

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Abstract

By providing a conductive capping layer (106) for metal-based interconnect lines, an enhanced performance with respect to electromigration may be achieved. Moreover, a corresponding manufacturing technique is provided in which via openings (110) may be reliably etched into the capping layer (106) without exposing the underlying metal (105b), such as copper-based material, thereby also providing enhanced electromigration performance, especially at the transitions between copper lines and vias.

Description

technical field [0001] In general, the present invention relates to the formation of microstructures, such as advanced integrated circuits, and in particular to the formation of conductive structures, such as copper-based metallization layers, and techniques for reducing their electrotransfer under operating and stress conditions . Background technique [0002] In today's fabrication of microstructures (eg, integrated circuits), there is a continuing trend to steadily shrink the feature size of microstructure components, thereby increasing the functionality of these structures. For example, in today's integrated circuits, the minimum feature size (eg, the channel length of a field effect transistor) has reached the deep sub-micron range, thereby improving the performance of these circuits in terms of speed and / or power consumption. The floor space available for interconnect lines electrically connecting individual circuit elements as the size of individual circuit elements ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/768H01L21/288
CPCH01L21/76802H01L21/76805H01L21/76814H01L21/76834H01L21/76844H01L21/76849H01L21/76883H01L21/28
Inventor M·莱尔F·科申斯基M·诺普尔
Owner ADVANCED MICRO DEVICES INC