Wiring board manufacturing method, semiconductor device manufacturing method and wiring board

Abstract

A semiconductor device 100 has such a structure that a semiconductor chip 110 is flip-chip mounted on a wiring board 120 . The wiring board 120 has a multilayer structure in which a plurality of wiring layers and a plurality of insulating layers are arranged, and has a structure in which insulating layers of a first layer 122 , a second layer 124 , a third layer 126 and a fourth layer 128 are provided. The first layer 122 has a first insulating layer 121 and a second insulating layer 123 . A protruded portion 132 which is protruded in a radial direction (a circumferential direction) from an outer periphery at one surface side of a first electrode pad 130 is formed on a whole periphery over a boundary surface between the first insulating layer 121 and the second insulating layer 123.

Description

Wiring board manufacturing method, semiconductor device manufacturing method, and wiring board technical field The present invention relates to a method of manufacturing a wiring board, a method of manufacturing a semiconductor device, and a wiring board, and more particularly, the present invention relates to a method of manufacturing a wiring board configured to improve the reliability of an electrode pad forming part of a multilayer substrate. Method of wiring board, method of manufacturing a semiconductor device, and wiring board. Background technique For example, as a method of forming BGA (Ball Grid Array) balls for connecting a die to a substrate or for connecting a package substrate to a motherboard, a manufacturing method is known in which multiple electrodes, and then form a solder resist film having holes communicating with the electrodes, melt the solder balls placed on the opening of each hole by heat treatment (reflow), and solder the solder balls so that the...

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Problems solved by technology

Also, in the case where a part of the first insulating layer 12 in contact with the outer periphery of the corner portion (B portion) of the electrode pad 10 is broken due to heating by the reflow process, there is such a problem that there may be a problem that soldering from the electrode pad 10 may occur. The corner portion (A portion) of the disk 10 faces the crack 20 of the second insulating layer 13

Also, in the case where the crack 20 becomes larger, the wiring portion 16 on the second insulating layer 13 may be cut off.

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