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Method for preparing visible light responding tungsten-containing semi-conductor photocatalysis material

A photocatalytic material and visible light technology, applied in hydrogen production, deodorization, disinfection, etc., can solve the problems of industrial application restriction, low efficiency, inability to absorb visible light, etc., and achieve the effect of improving utilization efficiency and relieving energy pressure

Inactive Publication Date: 2010-11-03
WUHAN UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, the chemically stable TiO 2 As the main research object, but its large-scale industrial application is severely restricted, the main problem is that due to TiO 2 The energy band structure determines that it can only absorb the ultraviolet part of sunlight, and cannot absorb visible light: the sunlight irradiated on the surface reaches the maximum radiation intensity near the wavelength of visible light at 500nm, and the energy in the visible light range with a wavelength of 400-750nm accounts for all of the sun’s energy. 43% of the light energy, and the ultraviolet light below the wavelength of 400nm is less than 5%, so use TiO 2 the efficiency is too low

Method used

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  • Method for preparing visible light responding tungsten-containing semi-conductor photocatalysis material

Examples

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Comparison scheme
Effect test

Embodiment 1

[0024] A preparation method for a tungsten-containing semiconductor photocatalytic material responsive to visible light, comprising the steps of:

[0025] 1) Selection of raw materials:

[0026] Synthesis of BaMFeWO by high-temperature solid-state reaction 6 , (M takes K element as an example)

[0027] Raw materials used (analytically pure) K 2 CO 3 1.38g,

[0028] (purity above 99.5%) WO 3 4.64g,

[0029] Analytical pure BaCO 3 3.95g,

[0030] Analytical grade FeCl 3 ·6H 2 O 5.41g,

[0031] Its chemical reaction equation:

[0032] K 2 CO 3 +2WO 3 +2BaCO 3 +2FeCl 3 ·6H 2 O→2BaKFeWO 6 +3CO 2 ↑+3H 2 O↑+6HCl↑,

[0033] K 2 CO 3 , FeCl 3 ·6H 2 O slightly excessive.

[0034] 2) After weighing the above-mentioned raw materials according to the above-mentioned doses, put them into a mortar, mix them and carefully grind them into micron-level powders, then put them into a φ10mm×20mm platinum crucible, and slowly heat up to 500°C in a mu...

Embodiment 2

[0036] A preparation method for a tungsten-containing semiconductor photocatalytic material responsive to visible light, comprising the steps of:

[0037] 1) Selection of raw materials:

[0038] Synthesis of BaMFeWO by high-temperature solid-state reaction 6(M takes K element as an example)

[0039] Raw materials used (analytical pure) KNO 3 1.01g,

[0040] (purity above 99.5%) WO 3 2.32g,

[0041] Analytical pure BaCO 3 1.97g,

[0042] Analytical grade FeCl 3 ·6H 2 O 2.70g,

[0043] Its chemical reaction equation:

[0044] KNO 3 +WO 3 +BaCO 3 +FeCl 3 ·6H 2 O → BaKFeWO 6 +CO 2 ↑+6H 2 O↑+3Cl 2 ↑+NO↑,

[0045] FeCl 3 ·6H 2 O slightly excessive.

[0046] 2) After weighing the above-mentioned raw materials according to the above-mentioned doses, put them into a mortar, mix them and carefully grind them into micron-level powders, then put them into a φ10mm×20mm platinum crucible, and slowly heat up to 500°C in a muffle furnace and p...

Embodiment 3

[0048] A preparation method for a tungsten-containing semiconductor photocatalytic material responsive to visible light, comprising the steps of:

[0049] 1) Selection of raw materials:

[0050] Synthesis of BaMFeWO by high-temperature solid-state reaction 6 (M takes K element as an example)

[0051] Raw materials used (analytically pure) K 2 SO 4 1.74g,

[0052] (purity above 99.5%) WO 3 4.64g,

[0053] Analytical grade BaCl 2 4.16g,

[0054] Analytical grade FeCl 3 ·6H 2 O 5.41g,

[0055] Its chemical reaction equation:

[0056] K 2 SO 4 +2WO 3 +2BaCl 2 +2FeCl 3 ·6H 2 O→2BaKFeWO 6 +SO3↑+H 2 O↑+10HCl↑,

[0057] FeCl 3 ·6H 2 O slightly excessive.

[0058] 2) After weighing the above-mentioned raw materials according to the above-mentioned doses, put them into a mortar, mix them and carefully grind them into micron-level powders, then put them into a φ10mm×20mm platinum crucible, and slowly heat up to 500°C in a muffle furnace an...

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Abstract

The invention relates to a preparation method of semiconductor photocatalysis material containing tungsten responsive to visible light, which is characterized by comprising: 1) selecting materials, according to mol ratio of M, Fe, Ba, W respectively in compound containing M, compound containing Fe, compound containing Ba, compound containing W which is 1:1:1:1; 2) mixing the compound containing M, the compound containing Fe, the compound containing Ba, the compound containing W evenly, grinding into powders in a crucible, then slowly heating up to 500 DEG C and preburning for 1-24 hours at constant temperature in a muffle furnace, taking out after cooling, then regrinding and heating up to 900-1200 DEG C for 1-48 hours at constant temperature in the muffle furnace, grinding after cooling;so the semiconductor photocatalysis material containing tungsten responsive to visible light is obtained. The invention has low cost and good absorption under visible light irradiation, the method issimple and easy to perform.

Description

technical field [0001] The field of the invention belongs to the field of new materials and also belongs to the field of environment-friendly materials; in particular, it relates to a preparation method of a tungsten-containing semiconductor photocatalytic material responsive to visible light. Background technique [0002] The use of photocatalytic technology to decompose organic matter and water to produce hydrogen is a "green technology", which has become a research hotspot in the industry and academia in various countries. Photocatalytic materials can effectively remove harmful substances and pollutants in the air under the irradiation of ultraviolet and visible light. It can kill bacteria and decompose water at room temperature to obtain hydrogen. At present, the chemically stable TiO 2 As the main research object, but its large-scale industrial application is severely restricted, the main problem is that due to TiO 2 The energy band structure determines that it can on...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B01J23/888B01J23/78A61L9/22C01B3/02
Inventor 夏文兵戴璐黄进王斌姜壬山
Owner WUHAN UNIV OF TECH
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