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Method for enhancing light-emitting efficiency of semiconductor type carbon nano-tube

A technology of carbon nanotubes and luminous efficiency, applied in semiconductor devices, electrical components, circuits, etc., can solve problems such as the luminous efficiency that cannot be achieved through carbon nanotubes

Inactive Publication Date: 2008-11-19
北京科岳中科科技服务有限公司
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Problems solved by technology

However, since photoexcited excitons can undergo non-radiative recombination through additional relaxation channels between carbon nanotubes, this method cannot intrinsically improve the luminous efficiency of carbon nanotubes.

Method used

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  • Method for enhancing light-emitting efficiency of semiconductor type carbon nano-tube

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Embodiment Construction

[0019] A method for improving the luminous efficiency of semiconducting carbon nanotubes, the method comprising:

[0020] Prepare carbon nanotube bundles containing semiconducting carbon nanotubes with different band gaps; the carbon nanotube bundles are all composed of semiconducting carbon nanotubes, or contain a small amount of metallic carbon nanotubes;

[0021] Wherein the method for preparing carbon nanotube bundles comprises:

[0022] a) Combining different carbon nanotubes into carbon nanotube bundles by using micromachines;

[0023] b) direct growth of carbon nanotube bundles using physical and chemical methods;

[0024] c) Dissolving carbon nanotubes into chemical reagents, separating and obtaining carbon nanotube bundles of different sizes by chemical and physical methods

[0025] The carbon nanotube bundle is prepared into a light-emitting device, and the excitation light that is close to or equal to the band gap of the wide bandgap semiconductor carbon nanotube ...

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Abstract

The invention relates to a method for improving luminous efficiency of a semiconductor carbon nano-tube. The method is characterized in that the method includes the following steps: preparing carbon nano-tube beams which have different bandgaps; preparing the beams into a luminous element; selecting exciting light with the bandgap close to or equal to the bandgap of the semiconductor carbon nano-tube to excite the carbon nano-tube beams so as to improve the photoluminescence efficiency of the semiconductor carbon nano-tube with narrow bandgap; or preparing the carbon nano-tube beams into a luminous element and applying voltage bias to both ends of the carbon nano-tube beams so as to improve the electroluminescence efficiency of the semiconductor carbon nano-tube with narrow bandgap.

Description

technical field [0001] The invention relates to a semiconductor near-infrared light source and a semiconductor near-infrared light-emitting diode, in particular to a method for improving the luminous efficiency of a semiconductor-type carbon nanotube. Background technique [0002] Carbon nanotubes are tubular structures surrounded by graphene sheets. Carbon nanotubes can be characterized by structure indices (n, m). The diameter of carbon nanotubes varies from 0.5 nanometers to several nanometers. Compared with other nanomaterials, carbon nanotubes have many unique properties. One-third of carbon nanotubes are metallic, while the other two-thirds are semiconducting. Due to the wide range of diameter distribution of carbon nanotubes, the band gap of semiconducting carbon nanotubes varies from visible light to far infrared. In addition, due to the very small radius of carbon nanotubes, both electrons and holes are confined to a very small scale, and the strong Coulomb inte...

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Application Information

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IPC IPC(8): H01L33/00
Inventor 谭平恒张俊李桂荣
Owner 北京科岳中科科技服务有限公司
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