Plasma chemical vapor deposition process for preventing generation of bag type defects

Abstract

The invention provides a plasma chemical vapor deposition method that can avoid bag-shaped defects. The bag-shaped defects may be produced on a wafer caused by incomplete reaction of reactant gases due to discontinuity of microwave generators in the prior art. The plasma chemical vapor deposition method that can avoid bag-shaped defects is carried out in a plasma chemical vapor deposition device provided with a plurality of wafer deposition tables, the gas phase deposition device is also respectively equipped with a microwave generator corresponding to each wafer deposition table, and the plasma chemical vapor deposition method comprises two steps of pre-deposition and main deposition, wherein, in the pre-deposition step, the plurality of microwave generators are started at different moments and run all the while, and in the main deposition step, the plurality of microwave power generators are all started at the beginning of the step, and are closed at different moments. The adoption of the method can avoid bag-shaped defects produced in plasma chemical vapor deposition.

Description

technical field [0001] The invention relates to a chemical vapor deposition process, in particular to a plasma chemical vapor deposition method which can avoid bag-shaped defects. Background technique [0002] When plasma chemical vapor deposition is performed in plasma chemical vapor deposition equipment, in order to obtain higher production efficiency, a plurality of wafer deposition tables are usually set up for simultaneous chemical vapor deposition of multiple wafers. The chemical vapor deposition equipment is also Corresponding to each wafer deposition platform, a microwave generator is provided. Taking the deposition of silicon nitride as an example, the chemical vapor deposition includes two steps of pre-deposition and main deposition. Now usually in the pre-deposition step, multiple microwave generators are not turned on at the same time, and continue after turning on, while in the subsequent main In the deposition step, in order to ensure the uniformity of the sil...

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Problems solved by technology

[0003] In the above-mentioned deposition process, due to the pause phenomenon of the microwave generator between the pre-deposition and the main deposition steps, when the microwave generator is paused, the gas in the reaction chamber is still reacting on the wafer surface, but the reaction at this time Gas molecules (such as silane and ammonia) will participate in the plasma reaction to generate large particles. After the subsequent main deposition steps are completed, the surface of the wafer will have multiple bag-like defects. In addition to affecting the appearance, the bag-like defects More importantly, it will affect the subsequent process production, such as the calibration accuracy of lithography and the accuracy of etching to form patterns

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