Cmp method of semiconductor device

Abstract

The present invention relates to a Chemical Mechanical Polishing (CMP) method of a semiconductor device. According to the method, a metal layer is formed over a semiconductor substrate in which an edge region define. A passivation layer is formed on the metal layer. The passivation layer formed in the edge region is etched in order to expose the metal layer. The exposed metal layer is removed through etching. The metal layer is polished by performing a CMP process, thus forming a metal line.

Description

[0001] Cross References to Related Applications [0002] This application claims priority from Korean Patent Application No. 10-2007-64486 filed on June 28, 2007, the entire contents of which are incorporated herein by reference. technical field [0003] The present invention relates to semiconductor devices, and more particularly to chemical mechanical polishing (CMP) methods that can remove residues remaining on edge regions of wafers. Background technique [0004] The CMP method is a polishing process in which a chemical reaction by a slurry and a mechanical treatment by a polishing pad are simultaneously performed. Compared with reflow process, etch-back process, etc., which are commonly used for surface planarization, this CMP method is advantageous in that overall polishing can be performed and can also be performed at low temperature. [0005] Specifically, the CMP method is proposed as a polishing process, but recently it is also used as an insulating film etching p...

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Problems solved by technology

At this time, the tungsten film remained irregular at the edge of the wafer because the pad pressure was not constant near the edge of the wafer (i.e., about 10 mm from the edge) where contact between the polishing pad and the wafer was insufficient

If a subsequent process of deposition or etching of an oxide film or a nitride film having a large film stress or a subsequent thermal process is performed in this state, process abnormalities such as lifting may occur due to irregularly held tungsten. ), particle residue and arching

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