LED chip / wafer/ epitaxial slice non-contact type checking method and checking device
A technology of LED chip and detection method, which is applied in the direction of measuring device, semiconductor/solid-state device testing/measurement, photometry, etc., can solve problems such as damage, chip pollution, increase production cost, etc., and achieve the effect of reducing cost
Inactive Publication Date: 2010-11-10
CHONGQING UNIV
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Problems solved by technology
For the detection of LED epitaxial wafers and chips, since the test probe must contact the chip when detecting electrical parameters, it is easy to cause pollution or even damage to the chip, and the test probe itself is a consumable part, which increases production costs, so it is difficult to test for LED. High-volume production process acceptance
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Abstract
The invention discloses a non-contact detection method of LED chip / wafer / epitaxial sheet, and a detection device thereof. The method comprises detecting the luminescent and electrical characteristics of the LED chip / wafer / epitaxial sheet, according to the photoluminescence of the detected device PN under the condition with the irradiation of controllable exciting light. The detection device comprises a detection control and signal processing unit which is used for processing and analyzing the signals transmitted by a light detecting unit, and a testing stand which is used for holding / moving the detected device and bearing the light detecting unit. The detection method has the beneficial effects of simultaneously realizing the non-contact and non-destructive testing of the luminescent and electrical characteristics of the LED chip / wafer / epitaxial sheet; the detection and screening of LED products is driven into the step of ''chip'' from the step of ''finished product'', which reduces the costs of the LED.
Description
Non-contact detection method and detection device for LED chip / wafer / epitaxial wafer technical field The invention relates to a detection technology of LED chip / wafer / epitaxial wafer parameters, in particular to a non-contact detection method and detection device for LED chip / wafer / epitaxial wafer. Background technique The semiconductor light-emitting device LED (Light Emitting Diode) is developing from a display device to a next-generation main lighting device due to its long life, low energy consumption, no pollution, shock resistance, fast response, flexible application, and convenient control. With the continuous breakthrough of the key technology of LED, its luminous efficiency has been rapidly improved. The application field of using LED as a semiconductor lighting source continues to expand, and scientific researchers, engineers and technicians, and enterprise producers are working together to achieve the application of LED as a general lighting source in the shorte...
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Patent Type & Authority Patents(China)
IPC IPC(8): G01M11/02G01R31/26G01J1/00H01L21/66
Inventor 文玉梅文静李平朱永李恋
Owner CHONGQING UNIV
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