Unlock instant, AI-driven research and patent intelligence for your innovation.

Differentiated-temperature reaction chamber

A reaction chamber, the highest temperature technology, applied in the field of reaction chamber, can solve problems such as time-consuming

Inactive Publication Date: 2009-01-21
LPE
View PDF2 Cites 4 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0012] According to the solutions typically adopted to solve this problem, the reaction chamber is periodically disassembled from the reactor and cleaned mechanically and / or chemically; not working; otherwise, after this cleaning operation has been performed a certain number of times, the reaction chamber must be discarded or disposed of

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Differentiated-temperature reaction chamber
  • Differentiated-temperature reaction chamber
  • Differentiated-temperature reaction chamber

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0025] The present description and the above-mentioned drawings are only illustrative and not restrictive examples; moreover, it should be considered that the drawings described are schematic and simplified.

[0026] In all figures, the reaction chamber is shown configured in its working state, i.e. when the reaction chamber has been inserted into an epitaxial reactor (not shown) and can process substrates; in particular, the reactor is used for deposition Epitaxial reactor for silicon carbide layers.

[0027] Throughout the description of the various embodiments, the same reference numerals will be used to denote equivalent components.

[0028] figure 1 Shown is an example of an assembly consisting of: a reaction chamber, indicated as a whole by reference numeral 1; a shell, indicated as a whole by reference numeral 6, which encloses chamber 1; and a tube, indicated by reference numeral 7, which encloses shell6.

[0029] The chamber 1 extends uniformly in the horizontal di...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

The present invention relates to a reaction chamber (1) for an epitaxial reactor, provided with walls delimiting an inner cavity (10), specifically a lower wall (3) and an upper wall (2) and at least two side walls (4,5); the lower wall (3) and the upper wall (2) have different configurations and / or arc made of different materials; this allows the lower wall (3) to be heated to a higher temperature than the upper wall (2). The present invention also relates to a method for heating a reaction chamber.

Description

technical field [0001] The invention relates to a reaction chamber for an epitaxial reactor and to a method for heating the reaction chamber. Background technique [0002] Epitaxy reactors for microelectronic applications are designed for very smooth and uniform deposition of thin layers of material (usually semiconductor material) on a substrate (a process often referred to as "epitaxy"); The substrate is referred to as a "wafer". [0003] The deposition typically takes place at high temperature in the inner (reaction) cavity of the reaction chamber by a CVD [Chemical Vapor Deposition] process. [0004] As is well known in the field of epitaxial reactors, reaction chambers are basically divided into two main types: "cold wall" chambers and "hot wall" chambers; these terms essentially refer to the surface temperature of the chamber where the epitaxial deposition process takes place. [0005] During the deposition process, the material is simultaneously deposited on the sub...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C30B25/10F27B14/06
CPCC23C16/46C30B23/06C30B25/10F27B17/0025F27B14/061C30B35/00F27D1/0006C30B25/08F27B14/06
Inventor 杰安卢卡·瓦伦特吉亚科莫·尼克劳·麦考利丹尼罗·克里帕弗兰科·佩雷蒂
Owner LPE