Semiconductor foreign substrate and growing method thereof

Abstract

The invention provides a foreign substrate of the semiconductor, comprising a substrate layer, an epitaxial layer and a buffer layer with nanotube materials between the substrate layer and the epitaxial layer. The invention also provides a growth method for the foreign substrate of the semiconductor. The invention has the advantages that: by adopting the buffer layer with nanotube materials and making use of the properties of the flexible linkage of the nanotube, the lattice mismatch and thermal mismatch between the epitaxial layer and the substrate layer are eliminated, so as to reduce the stress in the epitaxial layer; as to the provided growth method, during the growth process of the epitaxial layer on the surface of the nanotube, the nanotube as a nucleation center during the epitaxial process of the epitaxial materials is used for forming high-quality crystal nucleus at the initial epitaxial stage, thus being beneficial to improving the crystal quality of the epitaxial layer.

Description

【Technical field】 [0001] The invention relates to a semiconductor material and a growth method of the semiconductor material, in particular to a semiconductor heterogeneous substrate and a growth method thereof. 【Background technique】 [0002] With the continuous development and progress of the information society, semiconductor materials are more and more widely used in people's lives. Silicon materials are mainly used in the field of integrated circuits, compound semiconductor materials are mainly used in semiconductor lighting and display fields, and various semiconductor materials are also used in large quantities in many other fields. [0003] Most of the widely used semiconductor materials are crystalline materials, which are difficult to exist in nature. Therefore, it is necessary to study the methods of growing crystalline semiconductor materials to meet the applications in various fields. In the process of growing crystalline semiconductor materials, it is often ne...

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Problems solved by technology

[0005] In the prior art, after the growth of these materials, there is a lack of a stress release layer, resulting in huge stress in the semiconductor heterogeneous substrate after growth, resulting in the sample being in a bent state, or even cracks, affecting the subsequent device process and performance. It has a great negative impact, and in severe cases, it can cause the substrate to be unusable in the subsequent process and become a waste product

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