Vapor deposition system and vapor deposition method
A technology of vapor deposition and electrical conductivity, which is applied in the field of vapor deposition systems and vapor deposition, can solve problems such as difficult to achieve stable control, and achieve the effect of improving productivity and output
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example 1
[0038] use figure 1 The vapor deposition system shown in produces an organic EL device on a substrate by the following vapor deposition method. The material containing part 7 of the vapor deposition source 5 has a pipe 8 with a relatively large conductance and two pipes 9 with a relatively small conductance.
[0039] The target film formation speed was set at 2.0 nm / s. The film formation speed immediately above the pipe 8 with a larger conductivity is maintained at about 1.9 nm / s. The flow rate of the vapor deposition material in the pipe 8 is completely controlled by the heating temperature of the material containing portion 7, but the heating temperature is kept substantially constant. The target film formation speed of the pipe 9 of small conductance was set so that the film formation speed immediately above the pipe 8 of larger conductance was 0.1 nm / s. The pipe 9 is provided with a needle valve as a flow rate adjustment mechanism 10 for controlling the flow rate of the...
example 2
[0043] use on the substrate Figure 3A Organic EL devices were fabricated using the vapor deposition sources shown in . The material containing portion 27 of the vapor deposition source is provided with six pipes 28 having the same electric conductivity. These pipes 28 are arranged at regular intervals on the top surface of the material containing portion 27 and at equal distances from the center of the top surface of the material containing portion 27 . Two of the six pipes 28 are provided with needle valves as a flow rate adjustment mechanism 30 for controlling the flow rate of the vapor deposition material.
[0044] The target film formation speed was set at 2.0 nm / s. The target film formation speed of the pipe without the needle valve was set so that the film formation speed immediately above the center of the top surface of the material containing portion 27 was 0.45 nm / s for each pipe. The flow rate of the vapor deposition material in these pipes is completely control...
example 3
[0049] use on the substrate Figure 3B Organic EL devices were fabricated using the vapor deposition sources shown in . The material containing portion 37 of the vapor deposition source is provided with a pipe 38 having a large conductance, a pipe 39a whose conductance is set to an intermediate level, and a pipe 39b having a small conductance.
[0050] The target film formation speed was set at 2.0 nm / s. The film formation speed immediately above the pipe 38 with larger conductivity is maintained at about 1.5 nm / s. The flow rate of the vapor deposition material of the pipe 38 is entirely controlled by the heating temperature of the material containing portion 37, but the heating temperature is kept substantially constant.
[0051] The target film formation speed of the pipe 39a of the intermediate conductance is set so that the film formation speed immediately above the pipe 38 of the larger conductance is 0.45 nm / s. The pipe 39a is provided with a needle valve as a flow ra...
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