Halftone mask and manufacturing method thereof
A technology of halftone mask, manufacturing method, applied in the field of halftone mask and its manufacture, to achieve the effect of simplifying the process, improving the quality, and simplifying the process
Active Publication Date: 2017-07-11
BEIJING BOE OPTOELECTRONCIS TECH CO LTD
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Problems solved by technology
[0016] The purpose of the present invention is to provide a half-tone mask and its manufacturing method, which can effectively solve the defect that the semi-transmissive region of the half-tone mask manufactured by the existing method has multiple transmittances
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[0045] FIG. 10 is a schematic structural diagram of a halftone mask of the present invention. As shown in FIG. 10 , the halftone reticle includes a clean and transparent substrate provided with a non-transmission area, a semi-transmission area, and a transmission area, and a mask material layer disposed on the non-transmission area and the semi-transmission area of the substrate 1, wherein, The thickness of the mask material layer in the non-transmission area is greater than that in the semi-transmission area, and the mask material layer in the semi-transmission area has a set uniform transmittance.
[0046] This embodiment proposes a half-tone reticle, by setting a mask material layer in the non-transmissive area and semi-transmissive area of the substrate, and changing the transmittance of the area by adjusting the thickness of the mask material layer in the semi-transmissive area, reducing the mask The number of material layers prevents overlapping deposition in the are...
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Abstract
The invention relates to a half-tone mask and its manufacturing method. The half-tone mask includes: a substrate provided with a non-transmission area, a semi-transmission area and a transmission area, and a mask material layer arranged on the non-transmission area and the semi-transmission area of the substrate , the thickness of the mask material layer located in the non-transmissive area is greater than the thickness of the mask material layer located in the semi-transmissive area. A method for manufacturing a halftone reticle comprising: forming a mask material layer on a non-transmission area and a semi-transmission area of a substrate provided with a non-transmission area, a semi-transmission area, and a transmission area; material layer. The invention effectively solves the phenomenon of overlapping deposition of material layers in the semi-transmissive area and the phenomenon of chemical reaction between the etchant used in the etching process and the formed material layer, thereby improving the quality of the half-tone mask.
Description
technical field [0001] The invention relates to a mask plate and a manufacturing method thereof, in particular to a halftone mask plate and a manufacturing method thereof. Background technique [0002] A halftone mask is a clean substrate with a non-transmissive area, a semi-transmissive area and a transmissive area on a transparent substrate, wherein the transmissivity of the semi-transmissive area is between that of the non-transmissive area and the transmissive area. Therefore, when using a half-tone mask to irradiate the photoresist, all the photoresist is left in the non-transmission area, part of the photoresist is left in the semi-transmission area, and the photoresist is completely removed in the transmission area, so that a half-tone mask can be used. The stencil etches the purpose of two areas. [0003] Currently, in the process of manufacturing an array substrate or a complementary metal oxide semiconductor (COMS for short) through multiple masking processes, the...
Claims
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IPC IPC(8): G03F1/32B23K26/36
Inventor 刘圣烈
Owner BEIJING BOE OPTOELECTRONCIS TECH CO LTD