Nitride semiconductor light-emitting device
A technology for nitride semiconductors and light-emitting devices, applied in semiconductor devices, electrical components, circuits, etc., can solve problems such as the deterioration of light extraction efficiency, and achieve the effect of improving light extraction efficiency
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example 1
[0047] Such as Figure 1A and 1B The nitride semiconductor light emitting device shown was fabricated in the following manner. First, on the substrate 101 of the sapphire substrate, Al r Ga 1-r A buffer layer made of N (0≤r≤1) (50 nm thick), a first n-type nitride semiconductor layer 102 (5 μm thick) of an n-type GaN layer, a barrier layer made of GaN, and In q Ga 1-q <q<1) a light-emitting layer 103 (100 nm thick) made of a well layer, a p-type nitride semiconductor layer 104 made of a p-type AlGaN layer (30 nm thick) and a p-type GaN layer (200 nm thick), and A second n-type nitride layer 105 (0.2 μm thick) of the n-type GaN layer was grown sequentially.
[0048] Next, form a figure 2 After the resist mask 201 of the shape shown, a concave portion having a depth to expose the first nitride semiconductor layer 102 is formed by dry etching (mesa etching) using the resist mask. image 3 is a schematic cross-sectional view of a nitride semiconductor light-emitting device...
example 2
[0052] Such as Figure 8 The nitride semiconductor light emitting device shown was fabricated in the following manner. First, as in Example 1, on the substrate 801 of the sapphire substrate, Al r Ga 1-r A buffer layer made of N (0≤r≤1) (50 nm thick), a first n-type nitride semiconductor layer 802 (5 μm thick) of an n-type GaN layer, a barrier layer made of GaN, and In q Ga 1-q Light emitting layer 803 (100nm thick) made of well layer made of N (0<q<1), p-type nitride semiconductor layer made of p-type AlGaN layer (30nm thick) and p-type GaN layer (200nm thick) 804, and a second n-type nitride semiconductor layer 805 of an n-type GaN layer (0.2 μm thick) are grown in this order.
[0053] Next, form the figure 2 After forming the resist mask 201 of the shape shown, by dry etching using the resist mask, etching is performed to the middle of the p-type nitride semiconductor layer 804 to form a layer having a depth to expose the p-type nitride semiconductor layer 804 recess ...
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