Method for manufacturing semiconductor micro electromechanical structure
A technology of micro-electromechanical structure and manufacturing method, applied in micro-structure technology, micro-structure device, manufacturing micro-structure device and other directions, can solve the problems of pollution of micro-electro-mechanical structure, difficult to package, troublesome and complicated, and reduce the probability of damage, The effect of reducing the amount of etching and avoiding side etching
A technology of micro-electromechanical structure and manufacturing method, applied in micro-structure technology, micro-structure device, manufacturing micro-structure device and other directions, can solve the problems of pollution of micro-electro-mechanical structure, difficult to package, troublesome and complicated, and reduce the probability of damage, The effect of reducing the amount of etching and avoiding side etching
CN101434375AInactive Publication Date: 2009-05-20MEMSMART SEMICON
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[0025] Figure 1 to Figure 5 The first embodiment of the manufacturing method of the semiconductor micro-electromechanical structure of the present invention is provided, and the specific steps are as follows:
[0026] (1) At first prepare at least one insulating circuit layer 20 with a micro-electromechanical structure 21 on the upper surface 11 of a silicon-based substrate 10, and make a sacrificial layer 30 and A barrier layer 40 (see figure 1 );
[0027] (2) Then make one layer of etch barrier layer 50 on the lower back surface 12 of the silicon base substrate 10, and etch the opening 51 of the barrier layer 50, the position of the opening 51 corresponding to the microelectromechanical structure 21 (see figure 2 );
[0028] (3) Deep reactive ion etching (DRIE) or wet etching is carried out from the lower back surface 12 of the silicon-based substrate 10, and a space 101 corresponding to the micro-electromechanical structure 21 is oriented formed on the silicon-based su...
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The invention discloses a method for manufacturing a semiconductor micro electronmechanical structure, which comprises the steps: firstly, at least one insulation circuit layer internally provided with a micro electronmechanical structure is produced on the upper surface of a silicon substrate, and a sacrifice layer and a blocking layer are sequentially produced on the upper surface of the insulation circuit layer from interior to exterior; secondly, an etching blocking layer is made on the lower backface of the silicon substrate, and deep reactive ion etching or wet etching is carried out to the lower backface of the silicon substrate so as to form a space corresponding to the micro electronmechanical structure; and finally etching is carried out to the insulation circuit layer and the sacrifice layer in sequence to lead the micro electronmechanical structure to be suspended. Therefore, lateral erosion can be effectively avoided, the probability of exposure and damage of the micro electronmechanical structure is low, and the final encapsulation cost can be reduced by being integrated with common integrated circuit packaging technologies.
Description
technical field [0001] The invention relates to a method for manufacturing a semiconductor, in particular a method for manufacturing a semiconductor micro-electromechanical structure. Background technique [0002] Existing semiconductor microelectromechanical systems include various semiconductor microstructures, such as immovable probes, flow channels, and cavity structures, or some movable springs, connecting rods, and gears (rigid body motion or flexible deformation ) and other structures. [0003] Various semiconductor applications can be formed by integrating the above-mentioned different structures and related semiconductor circuits. Therefore, how to improve the various functions of the micro-mechanical structure through the manufacturing method is a key indicator of the future semiconductor MEMS, and it is also a severe challenge for further research on chips in the future. If the known technology can be developed and improved, the future development prospects cann...
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Patent Timeline
20 May 2009
Publication
CN101434375A
- IPC
- B81C1/00
- Inventors
- 陈晓翔; 刘政谚