Formation method for side wall

Abstract

The invention relates to a formation method for a side wall, which comprises: providing a semiconductor basement, forming a grid on the semiconductor basement; using the grid as a mask to form a ultra-shallow junction on the semiconductor basement and using disilane as reaction gas to form an insulation layer on the semiconductor basement with the formed ultra-shallow junction; etching the insulation layer to form the side wall surrounding the grid. The formation method for the side wall can reduce the diffusion of doping material in the ultra-shallow junction, thereby reducing the increasing of junction depth.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a side wall forming method. Background technique [0002] In the semiconductor manufacturing process, spacers are used to surround the gate to prevent source-drain (S / D) implantation of a larger dose from being too close to the channel to cause source-drain punchthrough. [0003] Currently, the step of forming the sidewall includes: providing a semiconductor substrate; such as Figure 1a and 1b As shown, a gate 20 is formed on the semiconductor substrate 10; using the gate 20 as a mask, an ultra-shallow junction 30 is formed on the semiconductor substrate 10; on the semiconductor substrate 10 on which the ultra-shallow junction 30 has been formed forming an insulating layer; etching the insulating layer to form spacers 40 surrounding the gate 20 . [0004] As the critical dimension of the device enters 65 nanometers and below, the manufacturing process of th...

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Problems solved by technology

[0005] However, it has been found in actual production that after the ultra-shallow junction 30 is formed by using the traditional method, the subsequent formation process of the sidewall 40 still includes heat treatment operations. Usually, according to the selected process, such as the high temperature of 600-700 degrees Celsius required for the formation of the insulating layer for 3 minutes, or for 1 hour at a high temperature of 500-550 degrees Celsius; and the ultra-shallow junction is formed by performing lightly doped drain implantation (LDD) on the semiconductor substrate 10, such a high temperature will cause the ultra-shallow junction The dopant material in the shallow junction 30 diffuses out from the implanted region of the semiconductor substrate

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