Stack encapsulation method with grains reconfigured and stack construction thereof

Abstract

The invention relates to an encapsulation structure for reconfiguring crystal grains. The encapsulation structure comprises a crystal grain, an encapsulating body, a plurality of conduction columns, a plurality of patternized metal wire sections, a patternized protective layer and a plurality of conduction elements, wherein the active surface of the crystal grain is provided with a plurality of welding pads; the encapsulating body covers the crystal grain and exposes the plurality of the welding pads on the crystal grain; the plurality of the conduction columns run through the encapsulating body to form a first conduction end and a second conduction end at two ends respectively; the plurality of the welding pads of the crystal grain are in electric connection with each first conduction end of the plurality of the conduction columns through each patternized metal wire section; the patternized protective layer is used for covering the plurality of the welding pads of each crystal grain and the plurality of the patternized metal wire sections and exposes one surface outwards extended from part of the plurality of the patternized metal wire sections; and the plurality of the conduction elements are in electric connection with the exposed surface outwards extended from part of the patternized metal wire sections.

Description

technical field [0001] The present invention relates to a method for reconfiguring crystal grains, in particular to forming conductive pillars in the package body of the crystal grains as conductive terminals for electrically connecting a plurality of packaged and independent crystal grains Encapsulation method for stacking. Background technique [0002] Semiconductor technology has developed quite rapidly, so the miniaturized semiconductor die (Dice) must have diversified functional requirements, so that the semiconductor die must be configured with more input / output pads ( I / O pads), so that the density of metal pins (pins) has also increased rapidly. Therefore, the early lead frame packaging technology is no longer suitable for high-density metal pins; therefore, a ball array (Ball Grid Array: BGA) packaging technology has been developed. The ball array package has the advantage of higher density than the lead frame package. In addition, its solder balls are less prone ...

AI Technical Summary

Problems solved by technology

The thinned grains are reconfigured on another substrate, and then a plurality of grains are formed into a package by injection molding; since the grains are very thin, the package is also very thin, so When the package is detached from the substrate, the stress of the package itself will cause the package to warp, increasing the difficulty of the subsequent cutting process

[0006] In addition, after the wafer is diced, when it is reconfigured on another substrate, because the size of the new substrate is larger than the original size, it will not be aligned in the subsequent ball planting process, and the reliability of the packaging structure will be reduced.

For this reason, the present invention provides a method to form an alignment mark (alignment mark) on the back of the wafer before wafer dicing, which can effectively solve the problems of inability to align and package warpage during ball planting.

[0007] In addition, during the entire packaging process, there will be a problem that when the ball is planted, the manufacturing equipment will exert local excessive pressure on the die, which may damage the die; at the same time, it may also be caused by the material of the ball. The resistance value between the pads on the pad becomes larger, which affects the performance of the grain and other issues

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