D trigger for resonance tunnel-through diode

Abstract

The invention relates to a resonance tunneling dioxide D trigger, which comprises a first monostability-bistability conversion logic unit, a second monostability-bistability conversion logic unit, a latch unit, a transmission gate, a second transmission gate and a phase inverter, wherein the latch unit consists of a first phase inverter and a second phase inverter; the output of the first phase inverter is connected with the input end of the second phase inverter; the output of the second phase inverter is connected with the input end of the first phase inverter; the input end of the first transmission gate is connected with the output end of the first monostability-bistability conversion logic unit, while the output end is connected to the input end of the latch unit; the input end of the second transmission gate is connected with the output end of the second monostability-bistability conversion logic unit, while the output end is connected with the input end of the latch unit; and the output end of the phase inverter is connected with the input end of the first monostability-bistability conversion logic unit, one end of the phase inverter is earthed, and the input end of the phase inverter is connected to the input end of the second monostability-bistability conversion logic unit.

Description

technical field The present invention relates to a flip-flop circuit, in particular to a three-dimensional integration process suitable for using semiconductors, especially compound semiconductors, which utilizes the highly non-linear DC characteristics of resonant tunneling diodes to simplify circuit structure complexity A resonant tunneling diode D flip-flop suitable for high-frequency applications realized by advanced technology. Background technique Resonant tunneling diode is a nanoelectronic device based on quantum tunneling effect, and it is also one of the fastest solid-state electronic devices working at room temperature. However, since the resonant tunneling diode is a two-terminal device, current modulation cannot be realized, so integration with a three-terminal device is common in applications. The most integrated device with the resonant tunneling diode in the actual circuit is the high electron mobility transistor, and the circuit formed by it maintains the ...

AI Technical Summary

Problems solved by technology

However, there is no standard D flip-flop designed by using resonant tunneling diodes, and then cascaded for frequency division. The existing resonant tunneling diode frequency dividers are often limited in their application, such as the input clock signal must meet specific requirements. , such as delay, duty cycle, etc., so it may be necessary to integrate a clock buffer unit in the circuit,

This undoubtedly increases the complexity of the circuit, contradicting the original intention of the design

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