Chemical mechanical polishing technological process

Abstract

The invention discloses a chemical mechanical polishing technological method, which comprises the following steps: fixing a wafer to be polished on a grinding head of a chemical mechanical polishing instrument, wherein the front side of the wafer face towards a grinding cushion; dropping a chemical mechanical polishing liquid onto the polishing cushion; applying pressure on the grinding head and making the grinding head rotate; and making the polishing cushion and the polishing liquid rub the front side of the wafer so as to carry out chemical mechanical polishing on the front side of the wafer, wherein the down pressure is between 0.5 and 6psi, the rotating speed of a polishing head is between 50 and 150 rpm, and the flow rate of the polishing liquid is between 30 and 150 milliliters / minute. The chemical mechanical polishing technological method can effectively reduce the friction and the friction coefficient at the same time of guaranteeing the polishing flow rate so as to reduce obvious surface defects (scratches, corrosion and so on) and meet the requirement on advanced processing procedures.

Description

technical field [0001] The invention relates to a chemical mechanical polishing process method. Background technique [0002] With the development of microelectronics technology, VLSI chip integration has reached billions of components, and the feature size has entered the nanometer level, which requires hundreds of processes in the microelectronics process, especially multi-layer wiring, Substrates and media must be globally planarized. Chemical mechanical planarization is considered to be the best global planarization method. The continuous introduction of low-dielectric materials in advanced manufacturing processes puts forward higher requirements for chemical mechanical planarization, and low-dielectric materials are more sensitive to friction due to their own characteristics. Commonly used chemical mechanical planarization can easily cause various damages to low-dielectric materials under high downforce; at the same time, the grain boundary corrosion and surface rough...

AI Technical Summary

Problems solved by technology

Commonly used chemical mechanical planarization can easily cause various damages to low dielectric materials under high down pressure; at the same time, the grain boundary corrosion and surface roughness caused by high friction on the surface of metals (copper, aluminum, tantalum, etc.) It is another important cause of corrosion, so it is particularly necessary to provide a chemical mechanical polishing method that can effectively control surface friction to meet the needs of advanced processes

However, there is no patent report on the effective control of surface friction coefficient by chemical mechanical polishing process.