Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Infrared filter used for human face recognition and production method thereof

An infrared filter, face recognition technology, applied in the field of biometric recognition, can solve the problem of slow CMOS, and achieve the effect of ensuring stability and reliability

Active Publication Date: 2009-07-01
HANVON CORP
View PDF1 Cites 19 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Second, as the wavelength increases, the attenuation speed of the response intensity, CMOS is slower than CCD

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Infrared filter used for human face recognition and production method thereof
  • Infrared filter used for human face recognition and production method thereof
  • Infrared filter used for human face recognition and production method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0027] Figure 5 is the spectral transmittance curve of the infrared filter used for face recognition in the present invention. according to figure 1 with figure 2 Regarding the spectral energy distribution diagram of sunlight and common lighting lamps, combined with the characteristics of infrared light-emitting diodes and CMOS image sensor chips, in the face recognition system using an external infrared active light source, the key component infrared filter is made of infrared light Made of glass coating, its spectral transmittance curve has two important characteristics of narrow band and high cut-off depth. The narrow band can realize that the luminous energy of the matched infrared light emitting diode group in the half bandwidth B is at least 5 times that of sunlight or illumination light in the half bandwidth B. The high cut-off depth can realize that the luminous energy of the matched infrared light-emitting diode group within the half bandwidth is at least 5 times...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

Disclosed are an infrared filter for face recognition and a manufacturing method thereof, which belong to the biometrics identification field. The infrared filter manufactured by adopting the method of coating infrared-transmitting glass which has the important characteristics of narrow band and high cut-off height. The specific manufacturing method includes forming a narrow-band peak by coating a filter membrane on the infrared-transmitting glass, realizing central wave length Gamma0, peak transmittance T0 and half bandwidth B, realizing visible light cut-off S through the thickness and the material of the infrared-transmitting glass, coating a band-pass cut-off filter membrane on the float glass to realize the infrared cut-off depth S, and gluing a colored glass coated with a narrow-band filter membrane and the float glass coated with the band-pass cut-off filter membrane by the photoresist. The narrow-band high cut-off depth infrared-transmitting filter manufactured by the method can be engaged with an infrared emitting diode group to form an invisible constant light source, thereby resolving the light problem besetting the face recognition performance for a long time.

Description

technical field [0001] The invention belongs to the field of biometric identification, and relates to an infrared filter, which is a key component of face recognition. The infrared filter has two important characteristics of narrow band and high cut-off depth. In the face recognition system using an external infrared active light source, it can effectively ensure that the lighting conditions of the face image are constant. Background technique [0002] Biometric identification technology is listed as one of the top ten technologies that have had a revolutionary impact on human society in the 21st century. Biometric identification technology is currently the most convenient and safe identification technology, which identifies the person himself and does not require external markers. Biometric recognition technology uses human physiological and behavioral characteristics for identification, mainly including fingerprint recognition, face recognition, iris recognition, gait rec...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): G02B5/20G02B5/28C03C17/00C03C27/10
Inventor 刘迎建石践
Owner HANVON CORP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products