Non-volatile memory system and method with variable error correcting capability

Abstract

The invention discloses a nonvalatile memory system with variable error correcting capability, which comprises a system bus interface module, an RS encoder, an RS decoder, an NAND read-write time sequence generator and an error correcting capability configuration module. The error correcting capability configuration module carries out order input and error correcting information feedback with outside world through the bus interface module. The error correcting capability configuration module carries out error correcting capability configuration to the RS encoder and the RS decoder respectively in accordance with instructions and outputs feedback information obtained from the RS encoder and the RS decoder respectively through the bus interface module. The system takes both speed and error correcting capacity into consideration, thus realizing the error correcting capacity adjustment in various environments so as to obtain the best error correcting configuration.

Description

technical field [0001] The invention relates to a structure for enabling a non-volatile storage system to have an error correction function and an error correction method thereof. Background technique [0002] In modern digital systems, it is often necessary to store large-capacity data. In addition to traditional magnetic substances as storage media, various semiconductor storage devices have appeared one after another with the development of semiconductor technology. However, due to the characteristics of semiconductor devices, some bit errors will be introduced in the process of manufacturing and use. With the increase of its capacity, the commonly used flash memory NANDFLASH has a higher probability of error. Therefore, it is necessary to read and write the flash memory NANDFLASH In operation, an additional error-correcting code is generally used. [0003] Generally speaking, the error correction code used in flash memory NAND FLASH devices is generally Hamming code, wh...

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Problems solved by technology

[0009] In order to solve the problem that the NANDFLASH read and write control error correction speed is fixed and the flexibility is not enough in the prior art, the present invention proposes a non-volatile storage system with variable error correction capability implemented by full hardware. The system includes: Bus interface module 101, RS encoder 102, RS decoder 103 and NAND read and write timing generator 105, data is written through the system bus through bus interface module 101, RS encoder 102, NAND read and write timing generator 105 and flash memory interface The storage system performs a read operation through a flash memory interface through a NAND read and write timing generator 105, an RS decoder 103, and a bus interface module 101. It is characterized in that the system also includes an error correction capability configuration module 104, which passes the bus interface module 101 performs command input and error correction information feedback with the outside world, and the error correction capability configuration module 104 performs error correction capability configuration on the RS encoder 102 and RS decoder 103 respectively according to the instructions, and respectively configures the RS encoder 102 and RS The feedback information obtained by the decoder 103 is output through the bus interface module 101

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