Multi-physical field interface multi-scale design method of structure of micro-nano electronic device
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- JIANGSU UNIV
- Publication Date
- 2009-08-26
- Estimated Expiration
- Not applicable · inactive patent
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Abstract
Description
technical field
[0001] The invention relates to micro-nano simulation, in particular to a multi-scale coupling design method for studying multi-physics field interfaces of electronic device structures. Background technique
[0002] Multilayer structures and multiple interfaces are ubiquitous phenomena in micro-nano electronic devices and device interconnection and packaging. Interface delamination failure has become an important concern in product performance and reliability. Foreign researchers have found through a large number of experiments that the interface is a key part in the manufacture and operation of microsystems, and many damages and defects occur near the interface. However, the research on the interface law of microscopic materials has just started, and the macroscopic theory based on continuum mechanics is no longer applicable. The physical characteristics of the micro-material interface are not only related to the geometry of the microstructure and the distr...