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Method for testing leakage current of MOS device

A technology of MOS devices and testing methods, which is applied in the direction of single semiconductor device testing, measuring current/voltage, instruments, etc., can solve problems such as low efficiency of MOS devices, and achieve the effect of solving low efficiency

Inactive Publication Date: 2011-08-03
SEMICON MFG INT (SHANGHAI) CORP
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] The purpose of the present invention is to provide a method for testing the leakage current of MOS devices, to solve the problem of low efficiency of traditional parameter automatic test equipment testing small leakage current MOS devices

Method used

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  • Method for testing leakage current of MOS device
  • Method for testing leakage current of MOS device
  • Method for testing leakage current of MOS device

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Embodiment Construction

[0015] See image 3 Shown is the flow chart of the method for testing MOS device leakage current of the present invention. The test method is to use a parameter automatic test device to test, and the test component is connected to the MOS device to be tested during the test. It includes step 1: judging whether the leakage current of the MOS device to be tested is greater than the standard value; if it is tested according to the test mode of the automatic test device with parameters, if not, go to step 2. Generally, the leakage current parameter of the MOS device to be tested has a test index value, and the leakage current value of the tested MOS device is required to be close to the index value, that is, within the allowable error range of the index value. If the leakage current value of the tested MOS device deviates from the error range of the index value, the manufactured MOS device on the wafer is considered unqualified. Compare the leakage current test index value of th...

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Abstract

The invention provides a method for testing leakage current of an MOS device. The method comprises the following steps: 1, judging whether the leakage current of the MOS device to be tested is larger than a standard value or not, if so, carrying out testing according to a self-contained testing mode of a parameter automatic testing device, and otherwise, carrying out a step 2; 2, connecting a testing part with the MOS device, loading testing voltage and testing the value of the leakage current of the MOS device; 3, after testing the value of the leakage current of the MOS device for one time,disconnecting the testing part and the MOS device; 4, judging whether testing times is equal to preset times, if so, confirming a minimum leakage current value of the MOS device of the preset times to be the leakage current value of the testing MOS device and stopping the test of the automatic testing device, and otherwise, carrying out a step 5; and 5, after preset time, carrying out the step 2.The testing method can solve the problems of low efficiency and low precision of the parameter automatic testing device during testing the MOS device with low leakage current and improve the utilization rate of the automatic testing device.

Description

technical field [0001] The invention relates to the field of electrical qualification testing of semiconductor devices, in particular to a testing method for testing parameter leakage current of MOS devices. Background technique [0002] MOS devices are commonly used devices in semiconductor integrated chips. At present, for low-power integrated chips, the leakage current parameters of MOS devices have become crucial parameters, and the leakage current parameters of MOS devices directly affect the static power consumption of low-power integrated chips. As the manufacturing process of integrated chips continues to develop towards deep sub-micron manufacturing processes, the leakage current parameter value tends to be smaller. In common electrical qualification tests, leakage current is a parameter that is difficult to test with stable results. See figure 1 , the current parameter automatic test device tests the wiring mode of MOS device 1 as follows figure 1 shown. Since...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01R31/26G01R19/165
Inventor 张向莉
Owner SEMICON MFG INT (SHANGHAI) CORP
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