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Semiconductor device and manufacturing method thereof

A manufacturing method and semiconductor technology, which can be used in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., and can solve problems such as reducing the breakdown voltage of components

Active Publication Date: 2012-02-22
VANGUARD INTERNATIONAL SEMICONDUCTOR CORPORATION
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, MOS transistors formed in this way may suffer from leakage current at or below the edge of the source / drain regions, thereby reducing the breakdown voltage of the device

Method used

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  • Semiconductor device and manufacturing method thereof
  • Semiconductor device and manufacturing method thereof
  • Semiconductor device and manufacturing method thereof

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Embodiment Construction

[0013] Hereinafter, the embodiments will be described in detail as a reference of the present invention, and the examples are illustrated with figures. In illustrations or descriptions, similar or identical parts use the same reference numerals. In the illustrations, the shape or thickness of the embodiments may be exaggerated to simplify or facilitate labeling. Parts of the elements in the icons will be described with descriptions. It is to be understood that elements not shown or described may have various forms known to those skilled in the art. Furthermore, when it is stated that a layer is on a substrate or another layer, the layer may be directly on the substrate or another layer, or there may be an intervening layer therebetween.

[0014] Figure 1 to Figure 5 It is a sectional view of the manufacturing process of the semiconductor device according to the preferred embodiment of the present invention. Please refer to figure 1 Firstly, a substrate 100 is provided, o...

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Abstract

The invention provides a semiconductor device and its manufacturing method, the device comprises: a substrate including a P-type well; a low-voltage element region and a high-voltage element region located in the P-type well; and a first-type ion field , located in the P-type well and selectively distributed in regions other than the high-voltage element region. The device can reduce the leakage current generated at the junction between the metal oxide semiconductor device and the high-voltage element region, thereby improving the breakdown voltage of the element, and thus increasing the operating voltage range of the element. Compared with the known semiconductor device, the semiconductor device can increase the breakdown voltage by more than 40%.

Description

technical field [0001] The present invention relates to a method of manufacturing a semiconductor device, and more particularly to a method of manufacturing a semiconductor device capable of increasing breakdown voltage. Background technique [0002] High-voltage components can be used in a variety of fields, including: LCD driver ICs, power management components, power supplies, non-volatile memory, communication circuits, and control circuits. What is more special is that the driving IC of the liquid crystal display needs to drive the relevant logic circuit at low voltage or medium voltage, and drive the liquid crystal display with high voltage. Since devices on a single chip require different breakdown voltages, how to make high-voltage device processes compatible with low-voltage and medium-voltage device processes is an important issue. [0003] Generally speaking, field implantation process can be used in most MOS transistors to add an insulating layer under the gate ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/822
Inventor 林治平庄璧光张弘立陈世明杨晓莹
Owner VANGUARD INTERNATIONAL SEMICONDUCTOR CORPORATION