Gas distributor and semiconductor processing equipment applying same

Abstract

The invention discloses a gas distributor comprising a supporting plate, a spoiler and a spray header electrode which are sequentially cascaded from top to bottom. The back of the supporting plate is provided with a first supporting table and supporting plate flow guide bosses, and a supporting plate groove is disposed between every two adjacent supporting plate flow guide bosses. The front face of the spoiler is provided with a second supporting table and spoiler grooves, and a spoiler flow guide boss is disposed between every two adjacent spoiler grooves; the width and the depth of the grooves are both larger than those of the corresponding flow guide bosses so that the flow guide bosses can be embedded into the corresponding grooves and when the first supporting table is in contact with the second supporting table, and a certain gap is remained between the flow guide bosses and the corresponding grooves so as to transfer and distribute gas. In addition, the invention also discloses semiconductor processing equipment applying the gas distributor. The gas distributor and the semiconductor processing equipment not only can relatively evenly distribute gas inside a reaction chamber, but also have the advantages of convenient processing, no easy damage, and the like.

Description

technical field [0001] The invention relates to the technical field of microelectronics, in particular to a gas distribution device and semiconductor processing equipment using the gas distribution device. Background technique [0002] With the rapid development of electronic technology, people have higher and higher requirements for the integration of integrated circuits, which requires companies that produce integrated circuits to continuously improve the processing / processing capabilities of semiconductor devices. Currently, plasma processing techniques such as plasma etching techniques are widely used in the processing / processing of semiconductor devices. The so-called plasma etching technology refers to the ionization of the process gas under the excitation of radio frequency power to form a plasma containing a large number of active particles such as electrons, ions, excited atoms, molecules and free radicals. Various physical and chemical reactions occur on the surfa...

AI Technical Summary

Problems solved by technology

[0018] First, it is difficult to process

In prior art 1, many downwardly protruding pins need to be set on the movable pin plate, which makes the processing more cumbersome

Moreover, corresponding to these pins, it is necessary to process a number of through holes on the electrode and gas distribution plate, and it is also necessary to ensure that the diameter of these through holes is slightly larger than the diameter of the pins, so

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