System and method for monitoring cavity state and semiconductor treatment equipment

Abstract

The invention discloses a system for monitoring a cavity state, comprising a detected part and a laser interference detection unit, wherein the laser interference detection unit emits incoming laser to the detected part; the incoming laser reflects on a first interface of an attachment to form a first reflected light and reflects on a second interface of the attachment to form a second reflected light; the first reflected light and the second reflected light are projected to the laser interference detection unit and generate interference; and the laser interference detection unit obtains a measuring value of a cavity state parameter relevant to the attachment according to the interference strength period of the reflected lights and the wavelength of the laser. The invention also discloses a method for monitoring the cavity state and semiconductor treatment equipment. The system, the method and the semiconductor treatment equipment can detect / monitor the state parameters (such as the thickness and / or amount, and the like of the attachment) of the attachment on the surface of a cavity, and the detection / monitoring result is more accurate.

Description

technical field [0001] The present invention relates to the technical field of microelectronics, in particular to a system and method for monitoring the status of a chamber. In addition, the present invention also relates to a semiconductor processing device to which the above monitoring system is applied. Background technique [0002] With the rapid development of electronic technology, people have higher and higher requirements for the integration of integrated circuits, which requires companies that produce integrated circuits to continuously improve the processing capabilities of semiconductor devices. At present, plasma etching technology is widely used in the processing and manufacturing of semiconductor devices. The so-called plasma etching technology refers to the ionization of the reactive gas under the excitation of radio frequency power to form a plasma containing a large number of active particles such as electrons, ions, excited atoms, molecules and free radica...

AI Technical Summary

Problems solved by technology

and use figure 1 The technology shown, even if it only analyzes the approximate composition of the deposits, will be affected by the residual gas of the process after the reaction, so that the components in the residual gas are mistakenly regarded as the components of the plasma, thus affecting the accuracy of the detection results sex

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