A chamber state monitoring system, method, and semiconductor processing equipment

Abstract

The invention discloses a chamber state monitoring system, which includes a measured part and a laser interference detection unit. The laser interference detection unit emits incident laser light to the measured part. The interface is reflected to form the first reflected light, and the second reflected light is reflected at the second interface of the attachment to form the second reflected light, and the first reflected light and the second reflected light are projected to the laser interference detection unit and generated Interference, the laser interference detection unit obtains the measured value of the chamber state parameter related to the attachment according to the reflected light interference intensity period and the wavelength of the laser. The invention also discloses a chamber state monitoring method and a conductor processing equipment. The system, method and semiconductor processing equipment provided by the present invention can detect / monitor state parameters (such as the thickness and / or quantity of the deposits) related to the attachments on the chamber surface, and the detection / monitoring results are relatively accurate.

Description

technical field [0001] The present invention relates to the technical field of microelectronics, in particular to a system and method for monitoring the status of a chamber. In addition, the present invention also relates to a semiconductor processing device to which the above monitoring system is applied. Background technique [0002] With the rapid development of electronic technology, people have higher and higher requirements for the integration of integrated circuits, which requires companies that produce integrated circuits to continuously improve the processing capabilities of semiconductor devices. At present, plasma etching technology is widely used in the processing and manufacturing of semiconductor devices. The so-called plasma etching technology refers to the ionization of the reactive gas under the excitation of radio frequency power to form a plasma containing a large number of active particles such as electrons, ions, excited atoms, molecules and free radica...

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Problems solved by technology

and use figure 1 The technology shown, even if it only analyzes the approximate composition of the deposits, will be affected by the residual gas of the process after the reaction, so that the components in the residual gas are mistakenly regarded as the components of the plasma, thus affecting the accuracy of the detection results sex

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