ITO sintered body and ITO sputtering target

A sintered body and secondary sintering technology, which is applied in the field of ITO sputtering targets, can solve problems such as no research

Inactive Publication Date: 2009-11-11
MITSUI MINING & SMELTING CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, as far as the present inventors know, no research has been done so far on the composition and shape of the particles present in the ITO sin

Method used

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  • ITO sintered body and ITO sputtering target
  • ITO sintered body and ITO sputtering target
  • ITO sintered body and ITO sputtering target

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0088] Indium oxide (In 2 o 3 ) powder and tin oxide (SnO 2 ) powder in a ratio of 90:10 (weight ratio), polyvinyl alcohol (PVA) as a binder was added to the powder, and ball milling was carried out. at 800kg / cm 2 The resulting mixed powder was compression-molded under an extrusion pressure of 100,000°C, and degreased in air to obtain a molded body.

[0089] The resulting molded body is placed in the state of the sintered plate and then put into a batch heating furnace, and the oxygen concentration of 100% is blown into the furnace while oxygen (for every 1m 3 The volume of the furnace, the amount is 1m 3 / h), the furnace is heated to 1600°C, and the holding time at this temperature is set to 0 seconds (instant), and then the temperature is immediately lowered to 1550°C. Then, after holding at 1550° C. for 2 hours, the oxygen in the furnace was replaced with argon and held for another 6 hours. At this time, the oxygen concentration in the furnace was 10.1%. Thereafter, ...

reference example 1

[0116] Manufacture the ITO molded body identical with embodiment 1, the molded body of gained is placed in the state of burning plate and then puts into the batch heating furnace again, blowing into the oxygen concentration in the furnace is the oxygen of 100% while (for each 1m 3 The volume of the furnace, the amount is 1m 3 / h), heat the furnace to 1600°C, and keep it at this temperature for 8 hours, replace the oxygen in the furnace with air, and blow in the air at the same time (for every 1m 3 The volume of the furnace, the amount is 1m 3 / h) cooling to room temperature, thereby obtaining an ITO sintered body.

[0117] The average temperature rise rate in the heating step at this time was 117° C. / hour, and the average temperature drop rate in the cooling step in the temperature range from 1600° C. to 400° C. was 175° C. / hour.

[0118] The firing conditions are shown below.

[0119] "Firing Conditions"

[0120] Room temperature→(50℃ / hour)→400℃→(100℃ / hour)→800℃×4 hours→...

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Abstract

Provided are an ITO sintered body, an ITO sputtering target material and an ITO sputtering target, for forming an ITO film having excellent properties with improved yield, especially an ITO sputtering target material and an ITO sputtering target, for obtaining the film having low resistance and excellent amorphous stability by using an ITO sintered body having a low bulk resistance value. A method for manufacturing the ITO sintered body suitable for such ITO sputtering target material and the ITO sputtering target is also provided. The ITO sintered body is an ITO (Indium-Tin-Oxide) sintered body wherein a fine particle composed of In4Sn3O12 exists in an In2O3 mother phase, i.e., the main crystal grain. The fine particle has substantially a chamfered cubic shape.

Description

technical field [0001] The present invention relates to an ITO sintered body and an ITO sputtering target. especially related to the In 2 o 3 In the parent phase, there is In with a specific shape 4 sn 3 o 12 An ITO sintered body of composed fine particles, a sputtering target material and an ITO sputtering target using the ITO sintered body. Background technique [0002] Due to its high permeability and conductivity, ITO film can be used as a transparent electrode for flat panel displays. This ITO film is formed by sputtering an ITO sputtering target. Conventionally, various studies have been carried out on the ITO sintered body used for this sputtering target, for example, in order to improve the yield of film formation, and to reduce or prevent the generation of arcs and particles during sputtering. For example, an attempt to prevent arc generation by controlling the surface roughness of an ITO sputtering target within a predetermined range has been disclosed (see ...

Claims

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Application Information

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IPC IPC(8): C04B35/00C23C14/08C23C14/34
CPCC04B2235/80C23C14/086C04B35/457C04B2235/6565C04B2235/85C04B2235/6562C04B2235/6585C23C14/3414C04B2235/78C04B2235/3286C04B2235/3293
Inventor 松前和男高桥诚一郎林博光
Owner MITSUI MINING & SMELTING CO LTD
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