Inner cavity type multiple-active region photon crystal vertical cavity surface transmission semiconductor laser device

Abstract

The invention relates to an inner cavity type multiple-active region photon crystal vertical cavity surface transmission semiconductor laser device, belonging to the semiconductor photoelectron field.The common oxidation limiting vertical cavity surface transmission semiconductor laser device has problems of multiple-transverse module laser shooting, low single module output power, large threshold current and large series resistance and so on. The invention adopts the multiple-active region structure on the active region of the device, meanwhile leads the defect type photon crystal structureinto DBR on the vertical cavity surface transmission semiconductor laser device, the inner cavity type multiple-active region photon crystal vertical cavity surface transmission semiconductor laser device with dozens of micrometres of single module operation oxidation bore diameter, dozens of mws of single module power, dozens of Ohms of series resistances and more than 40 dbs of side module inhibition can be obtained by optimizing the photon crystal period, the air bore diameter, the etching depth, the device diameter and the oxidation bore diameter and so on reasonably.

Description

Intra-cavity multi-active area photonic crystal vertical cavity surface-emitting semiconductor laser technical field The invention belongs to the technical field of optoelectronics, and in particular relates to the design and manufacture of a novel vertical cavity surface emitting semiconductor laser. Background technique Vertical cavity surface emitting laser (VCSEL) has the advantages of low threshold current, dynamic single longitudinal mode operation, small divergence angle, circular symmetric beam, high modulation bandwidth, easy two-dimensional integration, etc., and can be widely used in optical communication, optical storage and optical display and other fields. Common oxidation-limited vertical-cavity surface-emitting semiconductor lasers are structurally divided into two types: inner-cavity and outer-cavity. The material of the inner-cavity vertical-cavity surface-emitting semiconductor laser is mainly composed of III-V compound semiconductor materials through m...

AI Technical Summary

Problems solved by technology

Such a small oxide pore size will inevitably lead to a large series resistance

At the same time, a large series resistance will inevitably generate a lot of heat, which will deteriorate the thermal stability of the device.

It is difficult to control the process of making small oxidation holes 9

The smaller oxidation hole 9 makes the effective light-emitting area smaller and the single-mode output power is low

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