Static random-access memory with boosted voltages

Abstract

Dual port memory elements and memory array circuitry that utilizes elevated and non-elevated power supply voltages for performing reliable reading and writing operations are provided. The memory array circuitry may contain circuitry to switch a power supply line of a column of memory elements in the array to an appropriate power supply voltage during reading and writing operations. Each memory element may contain circuitry to select between power supply voltages during reading and writing operations. During reading operations, an elevated voltage may power cross-coupled inverters that store data in the memory elements while a non-elevated voltage may be used to turn on associated address transistors. During writing operations, the non-elevated voltage may power the cross-coupled inverters while the elevated voltage may be used to turn on the associated address transistors.

Description

technical field [0001] The present invention relates to integrated circuits with random access memory elements, and more particularly, to integrated circuits with static random access memory elements using boosted voltages. Background technique [0002] Integrated circuits often contain memory elements. Static random access memory elements may be based on cross-coupled inverters and may be used to store data. Each memory element can store a single bit of data. The memory elements are typically arranged in an array. Dual-port memory elements allow read and write operations to be performed on two separate ports. [0003] Dual port memory arrays are used in integrated circuits such as integrated circuit memories and programmable logic devices. [0004] A programmable logic device is a class of integrated circuits that can be programmed by the user to implement desired custom logic functions. Typically, logic designers use computer-aided design (CAD) tools to design custom ...

AI Technical Summary

Problems solved by technology

At the same time, the use of oversized transistors in memory elements can consume a large amount of real estate on an integrated circuit, which is undesirable

Images