Semiconductor etching method and semiconductor etching system

Abstract

The invention provides a semiconductor etching method and a semiconductor etching system. The method comprises the following steps: etching at least one wafer by utilizing current etching parameter values, etching etched patterns on the wafer; measuring the real depth of the etched patterns; calculating the deviation value of the real depth and the target depth, determining target etching parameter values needed by reaching the target depth according to the deviation value; adjusting the current etching parameter values to be the target etching parameter values, and executing the next etchingby using the target etching parameter values. The semiconductor etching system comprises an etching device, a measuring device and a feedback device. The semiconductor etching method and the semiconductor etching system can reduce the error during the etching, improve the etching accuracy of the etched patterns and reduce the difference among the etched patterns during different etchings.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a semiconductor etching method and an etching system. Background technique [0002] As the feature size of the device shrinks, the precision requirement for the device manufacturing is getting higher and higher. During semiconductor manufacturing, unwanted material is removed from the wafer surface by etching. Etching requirements depend on the type of feature pattern to be produced, such as aluminum alloy wiring, polysilicon gate, shallow trench isolation region. Due to the complex structure of the device, the wafer has a large number of materials requiring different etching parameters, which makes it difficult to control the accuracy of etching. At the same time, etching is affected by many external conditions such as air pressure, power supply, etching gas content, gas flow distribution of etching gas in the etching chamber, and etching time, so it is dif...

AI Technical Summary

Problems solved by technology

With the reduction of feature size in semiconductor manufacturing, the allowable error range is getting smaller and smaller, so this method of setting the error range to detect the etching result cannot accurately control the accuracy of etching

Because this method only performs feedback when the line width does not meet the requirements to adjust the etching parameters, and does not adjust the parameters if the requirements are met, so this method can only maintain the error within a certain range and cannot effectively reduce the error.

Moreover, with this method, even if the groove line width meets the requirements, there may be a large difference between the grooves etched at the same time, so that there is a large difference between the manufactured devices.

[0004] Similarly, there are errors that cannot be reduced in the etching of other etching patterns, and there may be large differences between the etching patterns that are not etched at the same time, so that there are large differences between the manufactured devices The problem

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