A memory and its production method

Abstract

The present invention relates to a memory and its production method. The memory comprises a protruding semiconductor, a volatile programmable structure, a dielectric structure, a gate structure, and a control circuitry applying bias arrangements to the protruding semiconductor and the gate structure. The memory suitable for DRAM applications, and for additional applications with lower power requirements. In the invention, the memory comprises a charge trapping FinFET structure including an upside-down U-shaped volatile programmable structure and an upside-down U-shaped dielectric structure overlying the volatile programmable structure.

Description

technical field [0001] The present invention relates to a memory device, and more particularly to a new dynamic random access memory structure and method for fabricating a dynamic random access memory device including such memory cells. Background technique [0002] In computer devices, DRAM is the main working memory and operates by storing each bit (ie, bit) of data, like the charge of individual capacitors in an integrated circuit. As time changes, the stored charge leaks from the capacitor, so the data needs to be read and updated periodically. Such updates occur relatively frequently. An exemplary random access memory update time is 64 milliseconds or less, which is the number of microseconds representing the update interval for each memory rank multiplied by the number of ranks (eg, 4000 or 8000 ranks). Such refresh requirements make RAM less than ideal for particularly energy-sensitive applications, such as very low-power mobile devices. [0003] Although the rando...

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Problems solved by technology

[0005] It can be seen that above-mentioned existing random access memory obviously still has inconvenience and defects in product structure, manufacturing method and use, and needs to be further improved urgently

In order to solve the above-mentioned problems, the relevant manufacturers have tried their best to find a solution, but no suitable design has been developed for a long time, and there is no suitable structure and method for general products and methods to solve the above-mentioned problems. This is obviously a problem that relevant industry players are eager to solve

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