Method, system and semiconductor processing equipment for reducing particle deposition in cavity

Abstract

The invention discloses a method for reducing particle deposition in a cavity. The method comprises the following steps of: heating sweeping gas in a charging subsystem so as to make the temperature of the sweeping gas entering the cavity higher than the ambient temperature in the cavity; and introducing the heated sweeping gas into the cavity to sweep the attaching particles attached to the inner wall of the cavity by means of the natural convection between cold and hot gases so as to reduce or avoid the deposition of the attaching particles on the inner wall in the cavity. In addition, the invention also provides a system for reducing the particle deposition in the cavity and the semi-conductor processing equipment for using the method and / or system. The method, the system and the semiconductor processing equipment have the advantages of reducing the deposition of the particles in the cavity, correspondingly reducing or even avoiding the erosion of the particles in the cavity, and improving the service life of the cavity and the service life of the corresponding semiconductor equipment.

Description

technical field [0001] The present invention relates to the technical field of microelectronics, in particular, to a method and system for reducing particle deposition in a chamber, and semiconductor processing equipment using the method and / or system. Background technique [0002] With the rapid development of electronic technology, people have higher and higher requirements for the integration of integrated circuits, which requires companies that produce integrated circuits to continuously improve the processing / processing capabilities of semiconductor devices. Currently, plasma processing techniques such as plasma deposition techniques, plasma etching techniques, and the like are widely used in the processing / processing of semiconductor devices. These plasma processing technologies usually need to be realized by means of corresponding semiconductor processing equipment. [0003] see figure 1 , the existing semiconductor processing equipment generally includes a pumping ...

AI Technical Summary

Problems solved by technology

Since these process gas particles include HBr, Cl 2 Such corrosive gas particles, therefore, when attached to the inner wall of the vacuum lock chamber, will cause corrosion to the inner wall of the vacuum lock chamber, thus affecting the process performance and service life of the vacuum lock chamber and even the entire semiconductor processing equipment

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