Multi-threshold field MOSFET and multi-threshold field MOSFET unit

A multi-threshold, gate dielectric layer technology, applied in the direction of electrical components, transistors, circuits, etc., can solve the problems of complex process, difficult precise control, and difficult precise control of Vth, and achieve low cost, simple manufacturing process, and easy realization of changes. Effect

Active Publication Date: 2011-01-19
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Those skilled in the art know that in the above-mentioned doping step, the process is relatively complicated, and an additional mask may be required, and N A It is difficult to control precisely, which makes Vth difficult to control precisely

Method used

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  • Multi-threshold field MOSFET and multi-threshold field MOSFET unit
  • Multi-threshold field MOSFET and multi-threshold field MOSFET unit
  • Multi-threshold field MOSFET and multi-threshold field MOSFET unit

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Embodiment Construction

[0027] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be further described in detail below in conjunction with the accompanying drawings.

[0028] figure 2 Shown is a top view of the multi-threshold field MOSFET structure of the first embodiment of the present invention, image 3 Shown is a cross-sectional view of the multi-threshold field MOSFET structure of the first embodiment of the present invention, the cross-sectional view is figure 2 The cross-section at A-A in the middle. Such as figure 2 , image 3 As shown, the multi-threshold field MOSFET 200 includes a gate electrode, a gate dielectric layer 220, a channel region 230, a source (Source) 240, a drain (Drain) 250 and a semiconductor substrate 260, and an N-type multi-threshold field MOSFET is For example, the semiconductor substrate 260 is a P-type doped semiconductor, and the semiconductor substrate 260 is further doped with P-type t...

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Abstract

A multi-threshold field MOSFET and a multi-threshold field MOSFET unit belong to the technical field of metal oxide semiconductor field-effect transistors. The multi-threshold field MOSFET comprises a gate electrode, a gate dielectric layer, a channel region, a source electrode, a drain electrode and a semiconductor substrate, the gate dielectric layer is a shallow trench isolation dielectric layer, the gate electrode is composed on the gate dielectric layer, the gate dielectric layer comprises a first part of gate dielectric layer covered by the gate electrode and a second part of gate dielectric layer uncovered by the gate electrode, the area ratio of the second part of gate dielectric layer to the first part of gate dielectric layer is adjusted by the composition of the gate electrode so as to change unit-area capacitance Cox, thus determining threshold voltage of the multi-threshold field MOSFET. The multi-threshold field MOSFET is characterized by easily changing the threshold voltage. The multi-threshold filed MOSFET unit consisting of a plurality of the multi-threshold field MOSFETs is characterized by different threshold voltages, and has the advantages of simple process and low cost.

Description

technical field [0001] The invention belongs to the technical field of Metal-Oxide-Semiconductor-Field-Effect-Transistor (MOSFET), in particular to a multi-threshold field MOSFET (Multi-Vth Field MOSFET) and a multi-threshold field MOSFET group. In particular, it relates to a multi-threshold field MOSFET whose threshold voltage is determined by patterning and adjusting the pattern of the gate electrode on the STI (Shallow Trench Insulator, shallow trench isolation layer) layer. Background technique [0002] MOSFET is one of the basic components in integrated circuits, and its basic physical principles have been well known by industry technicians. The formula for calculating the threshold voltage (Vth) of the MOSFET is listed in the following formula (1). [0003] [0004] In formula (1), Vth is the threshold voltage, ψ FB is the flat-band voltage, is the Fermi potential difference, N A is the doping concentration of the channel substrate region (this formula is the c...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/78H01L29/51H01L27/088H01L21/28
Inventor 黎坡张拥华周建华彭树根
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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