Liquid processing apparatus, liquid processing method and storage medium

A liquid treatment and cup body technology, which can be used in devices that apply liquid to surfaces, semiconductor/solid-state device manufacturing, coating, etc., and can solve problems such as increasing the total exhaust volume.

Active Publication Date: 2010-02-17
TOKYO ELECTRON LTD
View PDF4 Cites 10 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, in this technology, the adjustment of the exhaust volume is also carried out by adjusting the opening and closing degree of the damper, and the downstream side of the damper is always exhau

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Liquid processing apparatus, liquid processing method and storage medium
  • Liquid processing apparatus, liquid processing method and storage medium
  • Liquid processing apparatus, liquid processing method and storage medium

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0059] Hereinafter, according to an embodiment of the present invention, a case where the liquid processing apparatus of the present invention is applied to a coating apparatus for coating a resist liquid on a substrate such as a wafer W will be described as an example. figure 1 2 is the above-mentioned liquid processing device. In this liquid processing device 2, n (n is an integer greater than 3), in this example, 4 liquid processing units 21 to 24 are arranged in the horizontal direction (Y in the figure). Axial direction) in a state of being arranged side by side in a common frame 20. These liquid processing units 21-24 have the same structure, therefore, in figure 2 The liquid processing unit 21 is taken as an example for detailed description.

[0060] figure 2 Middle 3 is a spin chuck as a substrate holding portion for sucking and absorbing the central portion of the back side of the wafer W to keep it horizontal. The spin chuck 3 is connected to a drive mechanism ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

Disclosed is a liquid processing apparatus, a liquid processing method and a storage medium capable of increasing the number of arranged substrate retainers without increasing the total exhaust amountof the liquid processing apparatus. A N-number (N is an integer identical to or greater than three) of cup bodies are inhaled and exhausted in total exhaust amount E through a plurality of separate exhaustion passage each having a first damper, and through a common exhaustion passage connected in common downstream of the separate exhaustion passages. The first dampers are configured such that anexternal air is received from the cup body in a first intake amount of external air E1 for one of the cup bodies where a chemical liquid nozzle is placed at a setting location facing a wafer, and an external air is received from each of the other cup bodies in a second intake amount of external air E2 less than the first amount E1 and the intake amount of external air from both each of the other cup bodies and each of branched passages equals (E-E1)/(n-1).

Description

technical field [0001] The present invention relates to a liquid processing device, a method thereof, and a storage medium for performing liquid processing such as resist application, post-exposure development processing, and the like on semiconductor wafers, LCD (liquid crystal display) substrates, and the like. Background technique [0002] As one of the manufacturing processes of semiconductor devices, LCD substrates, etc., the process of forming a resist pattern on a substrate is carried out through the following series of processes: Forming a resist pattern on a substrate such as a semiconductor wafer (hereinafter referred to as "wafer") The resist film is exposed using a photomask and then developed to obtain a desired pattern. This series of steps is performed by an existing coating and developing device. [0003] Such a coating and developing device includes a liquid processing unit such as a coating unit for coating a resist solution, and an anti-reflection film for...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): G03F7/16G03F7/30H01L21/00B05C5/00B05C11/08B05C21/00
CPCH01L21/6715H01L21/67178H01L21/67051G03F7/162G03F7/3021G02F1/13G02F1/1339G02F1/1341
Inventor 长峰秀一木下尚文枇杷聪藤村浩二
Owner TOKYO ELECTRON LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap