Bonding welding disk lowering parasitic capacitance and preparing method thereof

Abstract

The invention discloses a bonding welding disk lowering parasitic capacitance and a preparing method thereof, belonging to the technical field of manufacturing semiconductors. The bonding welding diskprovided by the invention comprises a welding disk metal layer, a fist semiconductor doping well region, a second semiconductor doping zone and a first semiconductor high-doping zone, wherein, the fist semiconductor doping well region is formed by doping the semiconductor, the second semiconductor doping zone is formed in the fist semiconductor doping well region, and the first semiconductor high-doping zone is formed on the upper surface layer of the second semiconductor doping zone; junction capacitance formed between the first semiconductor doping well region and the second semiconductor doping zone, the junction capacitance formed between the second semiconductor doping zone and the first semiconductor high-doping zone and the junction capacitance formed between the first semiconductor doping well region and the semiconductor substrate are connected in series to lower the equivalent parasitic capacitance value of the bonding welding disk; meanwhile, the second semiconductor dopingzone has simple preparing method and increases little cost of the preparing technology of the bonding welding disk.

Description

Technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a bonding pad capable of reducing parasitic capacitance and a preparation method thereof. Background technique [0002] In the field of semiconductor manufacturing technology, the electrical connection between the internal circuit and the external signal is completed through the bonding pad (Bond-Pad). If the pad metal layer is only attached to the dielectric and receives external pressure and tension from the bonding wire, the pad metal layer may have a peeling-off phenomenon. In order to avoid the occurrence of this peeling phenomenon, it is necessary to use the contact between the connecting pad metal layer and the substrate to tie the pad metal layer, so the substrate and the pad metal layer are electrically connected. [0003] There is a junction capacitance between the semiconductor substrate of the bonding pad and the semiconductor doped well region. Because ...

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Problems solved by technology

If the pad metal layer is only attached to the dielectric and is subjected to external pressure and tension from the bonding wire, the pad metal layer may peel off (peeling-off)

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