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Film deposition apparatus, substrate processing apparatus, and computer readable storage medium

A film deposition and equipment technology, applied in the field of computer-readable storage media, can solve the problem of particles falling on a wafer and the like

Active Publication Date: 2010-03-03
TOKYO ELECTRON LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

As a result, reaction products are generated in the purge gas space, potentially allowing particles to fall on the wafer

Method used

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  • Film deposition apparatus, substrate processing apparatus, and computer readable storage medium
  • Film deposition apparatus, substrate processing apparatus, and computer readable storage medium
  • Film deposition apparatus, substrate processing apparatus, and computer readable storage medium

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Embodiment Construction

[0103] Non-limiting exemplary embodiments of the present invention will now be described with reference to the accompanying drawings. In the drawings, the same or corresponding components or components are denoted by the same or corresponding reference numerals. It should be noted that the drawings are only used to illustrate the present invention, rather than to represent the size or relative proportions of each component or component itself or among each other. Therefore, the specific thickness or size should be determined by those skilled in the art according to the following non-limiting embodiments.

[0104] figure 1 is along image 3 The cross-sectional view taken along the line B-B in, refer to figure 1 , a film deposition apparatus according to an embodiment of the present invention has: a flat cylindrical vacuum chamber 1; The vacuum chamber 1 is made such that a ceiling plate 11 can be separated from a vacuum chamber main body 12 . The top plate 11 is pressed ...

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Abstract

A disclosed film deposition apparatus includes a turntable having in one surface a substrate receiving portion along a turntable rotation direction; a first reaction gas supplying portion for supplying a first reaction gas; a second reaction gas supplying portion for supplying a second reaction gas; a separation area between a first process area where the first reaction gas is supplied and a second process area where the second reaction gas is supplied, the separation area including a separation gas supplying portion for supplying a first separation gas in the separation area, and a ceiling surface opposing the one surface to produce a thin space; a center area having an ejection hole for ejecting a second separation gas along the one surface; and an evacuation opening for evacuating the chamber.

Description

technical field [0001] The present invention relates to a film deposition apparatus and a film deposition method for depositing a film on a substrate by performing a plurality of cycles of sequentially supplying at least two source gases to the substrate to form a reaction product layer, and a method for storing the A computer-readable storage medium of a computer program for the film deposition apparatus to execute the film deposition method. Background technique [0002] So-called atomic layer deposition (ALD) or molecular layer deposition (MLD) is a known film deposition technique in semiconductor manufacturing processes. In this film deposition technique, first, a first reaction gas is adsorbed on the surface of a semiconductor wafer (hereinafter referred to as a wafer) under vacuum, and then a second reaction gas is adsorbed on the wafer surface to pass through the first The reaction with the second reactive gas on the wafer surface forms one or more atomic or molecula...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/455H01L21/00H01L21/677
CPCC23C16/45551C23C16/402
Inventor 加藤寿本间学A·迪普
Owner TOKYO ELECTRON LTD