Plasma processing apparatus and plasma processing method

Abstract

The invention relates to a plasma processing method and a plasma processing device. In a cathode coupling manner, a deposited film is prevented from additionally arranging on an electrode of an anodeside possibly to avoid the influence on subsequent procedures and improve the uniformity of the processing possibly. A processed base plate (W) is loaded on a base (16) of a lower electrode and a high-frequency power supply (30) exerts a high frequency for generation of the plasma. An upper electrode (34) arranged above the base (16) and relatively configured in parallel with the base is mounted in a cavity (10) through an annular isolator (35) in an electric flotation state. A variable-capacitance variable capacitor (86) is arranged in the space (50) between the upper surface of the upper electrode (34) and the ceiling of the cavity (10). The capacitance of the variable capacitor (86) is varied by a capacitance control part (85) according to processing conditions, and the ground capacitance of the upper electrode (34) is switched.

Description

[0001] This case is filed on March 30, 2007 , the application number is 200710091348.6 , the name of the invention is Plasma treatment method and plasma treatment device divisional application of the patent application. technical field [0002] The present invention relates to the technique of implementing plasma processing on a substrate to be processed, in particular to a capacitively coupled plasma processing device and a plasma processing method. Background technique [0003] In processes such as etching, deposition, oxidation, and sputtering in the manufacturing process of semiconductor devices or FPDs (Flat Panel Displays), plasma is often used in order to perform favorable reactions at relatively low temperatures in process gases. In the prior art, capacitively coupled plasma processing apparatuses have become the mainstream among sheet-type plasma processing apparatuses, especially plasma etching apparatuses. [0004] Generally, in a capacitively coupled plasma p...

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Problems solved by technology

However, as the frequency becomes higher, its high-frequency current gathers at the center of the electrode, and the density of the plasma generated in the processing space between the two electrodes is also higher at the center of the electrode than at the edge of the electrode. The problem of reduced in-plane uniformity increases

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