Radio-frequency power composite circuit

A technology of radio frequency power synthesis circuit, applied in power amplifiers, electrical components, high frequency amplifiers, etc., can solve the problems of poor isolation of CMOS switches, insufficient resistance to voltage breakdown, high cost of radio frequency power synthesis circuits, etc., and achieve insertion loss Low, improve the ability to withstand voltage breakdown, improve the effect of isolation and sensitivity

Active Publication Date: 2010-03-10
北京昂瑞微电子技术股份有限公司
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AI Technical Summary

Problems solved by technology

[0005] The present invention aims to solve the problems of high cost and inability to be highly integrated in the radio frequency power synthesis circuit using GaAs switches in the traditional technology, and the problem that the CMOS switch c...

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Embodiment Construction

[0015] In order to facilitate the understanding of those skilled in the art, the present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments.

[0016] The present invention aims to protect a novel radio frequency power synthesis circuit, in the radio frequency power synthesis circuit, the radio frequency switches are all made by CMOS technology. Aiming at the relatively low breakdown voltage of the CMOS process, in the present invention, a matching network or a combined isolation technology of a duplexer and a CMOS switch with a filter function is used to avoid the CMOS switch at the RX receiving end due to the high transmit power at the TX end. Poor voltage breakdown capability and the risk of being broken down, while making the isolation higher. Moreover, with this method of isolation, the single-gate structure of the CMOS switch can meet the requirements, making the overall chip area smaller and lower in cost. C...

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Abstract

The invention discloses a radio-frequency power composite circuit applied to the composite control of multi-frequency band power signals of a radio-frequency power amplifier and sending the signals by an antenna. The circuit comprises a switching device group I connected with the radio-frequency power amplifier and a matching network signal output end and a switching device group II connected with a signal receiving end, wherein the switching device group I is connected with the antenna by a duplexer and simultaneously and respectively connected with the switching device group II by a matching network; and the switching devices are CMOS devices. The circuit adopts technology using the matching network or the duplexer having filtering function to combine with and isolate from the switchingdevices, thus effectively improving the voltage breakdown resisting performance of the CMOS switching devices; the combined circuit is applied to the power composite circuit, thus ensuring higher integration degree and lower cost of a chip of the radio-frequency power amplifier; and simultaneously, the circuit also improves the isolation degree and flexibility of a wireless communication system and reduces insertion loss of the wireless communication system when a receiving end receives the radio-frequency signals.

Description

technical field [0001] The invention relates to the technical field of radio-frequency power amplifiers, in particular to a high-integration, low-cost radio-frequency power synthesis circuit using a CMOS process switch. Background technique [0002] The RF power amplifier is an indispensable component in the wireless communication system. It is mainly responsible for amplifying the modulated RF signal to a certain power value and then transmitting it through the antenna. Handheld devices using radio frequency power amplifiers usually require to work in multiple frequency bands, so there are multiple output powers, and general handheld devices are usually equipped with only one antenna component in order to reduce the volume and improve portability, which requires There is a radio frequency power synthesis circuit between the power amplifier and the antenna to control the output power of multiple channels. Since the RF power synthesis circuit is directly connected between th...

Claims

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Application Information

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IPC IPC(8): H04B7/005H03F3/19H03F3/21
CPCH04B1/0057
Inventor 周勇
Owner 北京昂瑞微电子技术股份有限公司
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