Power semiconductor device and manufacturing method

Abstract

The invention discloses a power semiconductor device and a manufacturing method thereof, a chip source electrode or an emitter electrode is directly welded to a packaging frame, and heat of a chip passes through the source electrode or the emitter electrode and is conducted outwards through a packaging frame base; and the welding areas of the frame and the source electrode or the emitter electrode and the grid electrode of the power chip are bulges. Protruding areas of the source electrode or the emitting electrode and the grid electrode of the frame are manufactured by punching and forming after the frame is extruded into strip-shaped copper strips, and the strip-shaped copper strips correspond to protrusions of areas where the source electrode or the emitting electrode and the grid electrode of the power chip are welded. The power semiconductor device and a common packaging power semiconductor device are consistent in appearance and pin arrangement, however, the thermal resistance is reduced by more than half, and the heat dissipation performance is obviously improved.

Description

technical field [0001] The invention belongs to the technical field of power semiconductor device manufacturing, and in particular relates to a device structure and a manufacturing method for improving the performance of a power semiconductor device. Background technique [0002] Power semiconductor devices such as MOS and IGBT currently produced usually have three electrodes, namely, the source or emitter electrode on the front, and the gate electrode, and the drain or collector electrode on the back. The history of the semiconductor industry has gradually developed from low frequency and low power, and gradually developed to high frequency and high power with the different needs of device applications. [0003] The design and manufacturing levels of early semiconductor devices were relatively low, so the production process was mainly to pursue simplicity and ease of operation. Obviously, one electrode is convenient for welding, and two electrodes are likely to cause electr...

AI Technical Summary

Problems solved by technology

[0004] Although a small number of manufacturers recently launched bottom-source MOS products, that is to say, the source is connected to the base of the package, whether it is the traditional front-mount process, CLIP jumper package, or the newly developed bottom-source MOS products, technology, the bottom plate of the packaging frame has always been flat, and the bottom of the source has only introduced a small number of low-power, low-voltage, SMD packaged MOS products, which have not been extended to the high-voltage and high-power device category so far.

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