Multifinger carbon nanotube field-effect transistor

Abstract

A multifinger carbon nanotube field-effect transistor (CNT FET) is provided in which a plurality of nanotube top gated FETs are combined in a finger geometry along the length of a single carbon nanotube, an aligned array of nanotubes, or a random array of nanotubes. Each of the individual FETs are arranged such that there is no geometrical overlap between the gate and drain finger electrodes overthe single carbon nanotube so as to minimize the Miller capacitance (Cgd) between the gate and drain finger electrodes. A low-K dielectric may be used to separate the source and gate electrodes in the multifinger CNT FET so as to further minimize the Miller capacitance between the source and gate electrodes.

Description

technical field [0001] [0001] The present invention relates generally to the field of nanotube devices and, more particularly, to multifinger carbon nanotube field effect transistors (CNT FETs). Background technique [0002] [0002] Theoretically, many single-walled carbon nanotube field-effect transistors (SWNT FETs) are predicted to have intrinsic cut-off frequencies close to the terahertz (THz) range, where intrinsic refers to the gate frequency required to tune the conductivity. Compared with the electrode-source capacitance, the parasitic capacitance generated by the fringing field is negligible. However, in practical applications, this parasitic capacitance often dominates the geometry of the CNT FET. [0003] [0003] When fabricating an individual CNT FET, it is beneficial to be able to measure its full S-parameters (or equivalent Z, h, or ABCD matrices), and then come up with an equivalent circuit model, which can be compared with the theoretical model, and as basis ...

AI Technical Summary

Problems solved by technology

In practice, however, the high impedance and low operating current of a single CNT FET hindered previous attempts to obtain these measurements

Images