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A barron device manufactured by using integrated passive component process

A technology of passive components and baluns, applied in the field of baluns, which can solve the problems of large communication device space and increased substrate area

Active Publication Date: 2010-03-17
ADVANCED SEMICON ENG INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In this way, the area for configuring the balun manufactured by the LTCC process and the area for configuring the radio frequency transceiver chip must be reserved on the substrate, so that the required area of ​​the substrate increases and occupies a larger space for communication devices.

Method used

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  • A barron device manufactured by using integrated passive component process
  • A barron device manufactured by using integrated passive component process
  • A barron device manufactured by using integrated passive component process

Examples

Experimental program
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Effect test

Embodiment Construction

[0044] Please refer to figure 1 , which is a schematic diagram of a balun. The balun includes transmission lines 102, 104, 106, and 108, and capacitors C1, C2, and C3. One end of the transmission line 102 is electrically connected to an unbalanced port (UnbalancePort) 110 , and the other end of the transmission line 102 is electrically connected to the transmission line 104 . The other end of the transmission line 104 is grounded through the capacitor C1. One end of the transmission line 106 is grounded, and the other end of the transmission line 106 is electrically connected to the balance port (Balance Port) 112 and the capacitor C2. One end of the transmission line 108 is electrically connected to the balanced port 114 and the capacitor C3, and one end of the transmission line 108 is grounded.

[0045] Please refer to figure 2 , which is shown as figure 1 Equivalent circuit diagram of the balun. The transmission lines 102 and 104 can be equivalent by the inductor L1,...

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PUM

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Abstract

The invention discloses a barron device manufactured by using integrated passive component process, which comprises a cardinal plate, a first coplanar helix structure and a second coplanar helix structure; at least two first left semi- coils of the first coplanar helix structure is electrically connected with two corresponding first right semi- coils through a first obliquity structure; at least twain second left semi- coils of the second coplanar helix structure is electrically connected with two corresponding right semi- coils through a second obliquity structure; two ends of the second coplanar helix structure is electrically connected with the second left semi- coil and the second right semi- coil in the most inner circle separately; the first left semi- coil and the second left semi-coil is placed overlapping; and the first right semi- coil and the second right semi- coil are placed overlapping.

Description

technical field [0001] The present invention relates to a balun circuit, and more particularly to a balun circuit fabricated using an Integrated Passive Device (IPD) process. Background technique [0002] Generally speaking, when the antenna in the communication device receives the wireless signal, the single-port electrical signal output by the antenna is output to a balun. The balun will convert the single-port electrical signal into a dual-port electrical signal, and output it to a radio frequency (Radio Frequency, RF) transceiver (Transceiver) for processing. [0003] A current balun is realized by a low temperature co-fired ceramic (LTCC) process. However, the balun manufactured by this LTCC process must first be electrically connected to a substrate by Surface-Mount Technology (SMT) before it can be electrically connected to the RF transceiver chip on the substrate. In this way, the area for configuring the balun produced by the LTCC process and the area for configur...

Claims

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Application Information

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IPC IPC(8): H01P5/10H01P5/12
Inventor 陈纪翰
Owner ADVANCED SEMICON ENG INC
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