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Metal-oxide-semiconductor circuit designs and methods for operating same

A power supply and transistor technology, applied in the field of metal oxide semiconductor circuits, can solve the problem of reducing the scale of CMOS devices

Inactive Publication Date: 2010-03-24
QUALCOMM INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The scale of CMOS devices may continue to decrease in the future

Method used

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  • Metal-oxide-semiconductor circuit designs and methods for operating same
  • Metal-oxide-semiconductor circuit designs and methods for operating same
  • Metal-oxide-semiconductor circuit designs and methods for operating same

Examples

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Embodiment Construction

[0043] In this document, the words "embodiment", "variant" and similar expressions are used to refer to a particular device, process or article, and not necessarily to the same device, process or article. Therefore, "one embodiment" (or similar expressions) used in one place or context may refer to a specific device, process or product; the same or similar expressions in different places may refer to different devices, processes or products. The expression "alternative embodiment" and similar phrases may be used to denote one of many different possible embodiments. The number of possible embodiments is not necessarily limited to two or any other amount.

[0044] An "Operational Transconductance Amplifier" or "OTA" is an amplifier, buffer, or similar arrangement of individual components in which an input voltage produces an output current; in essence, it is a voltage designed to provide essentially a current source (high impedance) output controlled current source.

[0045]"C...

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PUM

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Abstract

Complimentary Metal-Oxide-Semiconductor (CMOS) circuits made with core transistors are capable of reliable operation from an IO power supply with voltage that exceeds the reliability limit of the transistors. In embodiments, biasing of an operational amplifier is changed in part to a fixed voltage corresponding to the reliability limit. In embodiments, switched capacitor networks are made with oneor more amplifiers and switches including core transistors, but without exposing the core transistors to voltages in excess of their reliability limit. In embodiments, operational transconductance amplifiers (OTAs) include core transistors and operate from IO power supplies. Level shifters for shifting the levels of a power down signal may be used to avoid excessive voltage stress of the OTAs' core transistors during turn-off. Non-level shifting means may be used to clamp output voltages and selected internal voltages of the OTAs, also avoiding excessive voltage stress of the core transistorsduring turn-off.

Description

[0001] Claim of priority under 35 U.S.C § 119 [0002] This patent application asserts U.S. Provisional Application No. 60 / 909,409, assigned to the present assignee and expressly incorporated herein by reference. technical field [0003] The apparatus and methods described in this document relate to electronic circuit design. More particularly, apparatus and methods relate to metal oxide semiconductor circuits, and to methods for powering down such circuits. Background technique [0004] Many active filters, analog-to-digital converters (ADCs), and other circuits fabricated with complementary metal-oxide-semiconductor (CMOS) devices are designed and implemented using switched capacitor technology. CMOS switched capacitor circuits can use CMOS transistors and capacitors. [0005] In many electronic systems, including cellular telephones, a higher degree of system integration is required because integration provides lower production costs and allows more functionality to b...

Claims

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Application Information

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IPC IPC(8): H03F1/14H03F1/52H03F3/45
CPCH03F1/523H03F1/14H03F3/45183B82Y40/00H03F1/52H03F3/45
Inventor 苗国庆赛福拉·巴扎亚尼
Owner QUALCOMM INC
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