Monopole programmed resistance memory and storage operation method therefor

A resistive memory, unipolar technology, applied in the field of microelectronics, can solve problems such as large leakage current and increased power consumption of resistive memory

Inactive Publication Date: 2010-04-07
林殷茵 +1
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0010] However, in the implementation process of the third type of resistance switching memory, although the leakage current is smaller than that of the second type of resistance memory, there is also a problem of larger leakage current, which will increase the power consumption of the resistance memory during operation.

Method used

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  • Monopole programmed resistance memory and storage operation method therefor
  • Monopole programmed resistance memory and storage operation method therefor
  • Monopole programmed resistance memory and storage operation method therefor

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Embodiment Construction

[0056] The invention is described more fully hereinafter in reference to the examples illustrated in the illustrations, providing preferred embodiments but should not be considered limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the relevant art.

[0057] Where the referenced figures are schematic illustrations of idealized embodiments of the invention, the illustrated embodiments of the invention should not be construed as limited to the specific shapes of the regions shown in the figures.

[0058] It will be understood that when an element is referred to as being "on" or "extending over" another element, the element may be directly "on" or "extend" directly on the other element, or it may also be There is an insert element. In contrast, when an element is referred to as being "directly on" or "directly extending over...

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Abstract

The invention belongs to the technical field of integrated circuits, and in particular relates to a monopole programmed resistance memory and a storage operation method therefor. The memory adopts a multicomponent metal oxide with two or more components (such as CuxO in which x is more than 1 and less than or equal to 2, WOx in which x is more than or equal to 2 and less than or equal to 3, and the like) as a resistance conversion memory structure of a storage resistor, wherein each memory unit comprises a gating device and two or more storage resistors and diodes; the storage resistors are connected in serial with the diodes to form a module; a first output electrode of each module is connected with the same gating device, and is coupled to a word line through the gating device; a second output electrode of each module is coupled to different bit lines to form the structure that a plurality of storage resistors and the diodes share the same gating device; and the diodes are directly connected with n-type metal oxide semiconductors through p-type metal oxide semiconductors to form pn heterojunction with unidirectional conduction. The memory has the characteristic of high storage density and no crosstalk interference produced during storage operation.

Description

technical field [0001] The invention belongs to the technical field of microelectronics, and in particular relates to a low-power consumption unipolar programming resistance memory and an operation method thereof. Background technique [0002] Memory occupies an important position in the semiconductor market. Due to the continuous popularization of portable electronic devices, the share of non-volatile memory in the entire memory market is also increasing, and more than 90% of the share is occupied by FLASH. However, due to crosstalk (CROSS TALK), the tunneling layer cannot be thinned unlimitedly with the development of technology generations, and the bottleneck of FLASH development such as integration with embedded systems, people are forced to look for a new type of non-volatile memory with better performance. Recently, Resistive Random Access Memory (RRAM) has attracted high attention because of its high density, low cost, and strong ability to evolve with technology. Th...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G11C11/56G11C16/02G11C16/06G11C16/10H01L27/24H01L23/522
CPCH01L2924/0002
Inventor 林殷茵陈邦明
Owner 林殷茵
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